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MMBT4401LT1G

P1-P3P4-P6P7-P7
MMBT4401L, SMMBT4401L
www.onsemi.com
4
6.0
8.0
10
0
4.0
2.0
0.1 2.0 5.0 10
20 50
1.00.50.20.01 0.02 0.05
100
Figure 8. Frequency Effects
f, FREQUENCY (kHz)
SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25°C; Bandwidth = 1.0 Hz
NF, NOISE FIGURE (dB)
I
C
= 1.0 mA, R
S
= 150 W
I
C
= 500 mA, R
S
= 200 W
I
C
= 100 mA, R
S
= 2.0 kW
I
C
= 50 mA, R
S
= 4.0 kW
R
S
= OPTIMUM
RS = SOURCE
RS = RESISTANCE
100k50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k
6.0
8.0
10
0
4.0
2.0
NF, NOISE FIGURE (dB)
Figure 9. Source Resistance Effects
R
S
, SOURCE RESISTANCE (OHMS)
f = 1.0 kHz
I
C
= 50 mA
I
C
= 100 mA
I
C
= 500 mA
I
C
= 1.0 mA
h PARAMETERS
V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C
This group of graphs illustrates the relationship between h
fe
and other “h” parameters for this series of transistors. To obtain
these curves, a high−gain and a low−gain unit were selected from the MMBT4401LT1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
h
ie
, INPUT IMPEDANCE (OHMS)
Figure 10. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
50k
500
20k
10k
5.0k
2.0k
1.0k
0.1 0.2 0.5 0.7 1.0
2.0 3.0 10
0.3
5.0 7.0
Figure 11. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
0.1 0.2 0.5 0.7 1.0
2.0 3.0 10
0.3
0.2
10
Figure 12. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
100
1.0
5.0 7.0
50
20
10
5.0
2.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
h , OUTPUT ADMITTANCE ( mhos)
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
m
-4
0.1 0.2 0.5 0.7 1.0
2.0 3.0 10
0.3
5.0 7.0
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
MMBT4401L, SMMBT4401L
www.onsemi.com
5
STATIC CHARACTERISTICS
-55°C
Figure 13. DC Current Gain
I
C
, COLLECTOR CURRENT (A)
Figure 14. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.2
0.2
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
CE
I
C
= 1.0 mA
0.001
10 mA
100 mA
500 mA
50
250
300
500
0.01
h , DC CURRENT GAIN
0.1
0
1
FE
T
J
= 150°C
400
25°C
V
CE
= 5.0 V
V
CE
= 2.0 V
V
CE
= 1.0 V
Figure 15. Collector−Emitter Saturation
Voltage vs. Collector Current
I
C
, COLLECTOR CURRENT (A)
0.15
0.20
0.30
0.35
0.05
Figure 16. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0.01
0.1
0
-0.5
0
+0.5
-1.0
-1.5
-2.0
1
150°C
q
VC
for V
CE(sat)
q
VB
for V
BE
0.0001
COEFFICIENT (mV/ C)°
-2.5
1.0 2.0 5.0 10 20
50 100
500
200
0.1 0.2 0.5
0.01 0.1
1.0
110
300 mA
100
150
200
350
450
-55°C
0.001
25°C
0.10
0.25
I
C
/I
B
= 10
100
MMBT4401L, SMMBT4401L
www.onsemi.com
6
STATIC CHARACTERISTICS
Figure 17. Base−Emitter Saturation Voltage vs.
Collector Current
Figure 18. Base−Emitter Turn On Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.3
0.4
0.5
0.6
0.7
0.9
1.0
1.1
1
0.10.010.0010.0001
0.3
0.4
0.5
0.6
0.7
0.9
1.0
V
BE(sat)
, BASE−EMITTER SATURA-
TION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER TURN ON
VOLTAGE (V)
0.8
150°C
25°C
−55°C
0.8
150°C
25°C
−55°C
I
C
/I
B
= 10
V
CE
= 2.0 V
Figure 19. Input Capacitance vs. Emitter Base
Voltage
Figure 20. Output Capacitance vs. Collector
Base Voltage
V
eb
, EMITTER BASE VOLTAGE (V) V
cb
, COLLECTOR BASE VOLTAGE (V)
63210
9
11
13
15
19
21
5
0
3025100
1.5
2.5
3.5
4.5
6.5
8.5
C
ibo
, INPUT CAPACITANCE (pF)
C
obo
, OUTPUT CAPACITANCE (pF)
17
5.5
4 5 5 1520 354045
7.5
Figure 21. Safe Operating Area Figure 22. Current−Gain−Bandwidth Product
V
CE
, COLLECTOR EMITTER VOLTAGE (V) I
C
, COLLECTOR CURRENT (mA)
100101
0.001
0.01
1
100.1
10
1000
I
C
, COLLECTOR CURRENT (A)
f
T
, CURRENT−GAIN−BANDWIDTH (MHz)
0.1
100
1 100 100
0
10 msec
1 sec
V
CE
= 1.0 V
T
A
= 25°C
P1-P3P4-P6P7-P7

MMBT4401LT1G

Mfr. #:
Buy MMBT4401LT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 600mA 60V NPN
Lifecycle:
New from this manufacturer.
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