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SM5908

P1-P3P4-P6P7-P9
September 2011 Doc ID 2914 Rev 3 1/9
9
1N5908
SM5908
Transil™
Features
■ Peak pulse power:
– 1500 W (10/1000 μs)
■ Stand off voltage: 5 V
■ Unidirectional
■ Operating T
jmax
: 175 °C
■ High power capability at T
jmax
:
– 1500 W (10/1000 µs)
■ JEDEC registered package outline
Complies with the following standards
■ IEC 61000-4-2 level 4:
– 15 kV (air discharge)
– 8 kV (contact discharge)
■ IEC 61000-4-5
■ MIL STD 883G, method 3015-7 Class 3B
– 25 kV HBM (human body model)
■ Resin meets UL 94, V0
■ MIL-STD-750, method 2026 solderability
■ EIA STD RS-481 and IEC 60286-3 packing
■ IPC 7531 footprint
Description
This Transil series has been designed to protect
sensitive equipment against electrostatic
discharges according to IEC 61000-4-2, and
MIL STD 883, method 3015, and electrical over
stress according to IEC 61000-4-4 and 5. These
devices are more generally used against surges
below 1500 W (10/1000 μs).
The Planar technology makes it compatible with
high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time.
They are packaged in SMC (SMC footprint in
accordance with IPC 7531 standard) and
DO-201.
TM: Transil is a trademark of STMicroelectroniocs
K
A
SMC
(JEDEC DO-214AB)
K
A
DO-201
www.st.com
Characteristics 1N5908, SM5908
2/9 Doc ID 2914 Rev 3
1 Characteristics
Figure 1. Electrical characteristics - definitions
Figure 2. Pulse definition for electrical characteristics
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
P
PP
Peak pulse power dissipation
(1)
T
j
initial = T
amb
1500 W
T
stg
Storage temperature range -65 to +175 ° C
T
j
Operating junction temperature range -55 to +175 ° C
T
L
Maximum lead temperature for soldering during 10 s. 260 ° C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2. Thermal resistances
Symbol Parameter Value Unit
R
th(j-l)
Junction to leads
SMC 15
° C/W
DO-201 20
R
th(j-a)
Junction to ambient on printed circuit on recommended pad layout SMC 90
Junction to ambient DO-201 75
V
CL
V
BR
V
RM
I
RM
I
R
I
PP
V
I
I
F
V
F
V
CL
V
BR
V
RM
I
RM
I
R
I
PP
V
I
I
F
V
F
Symbol Parameter
V Stand-off voltage
V Breakdown voltage
V Clamping voltage
I Leakage current @ V
I Peak pulse current
T Voltage temperature coefficient
V Forward voltage drop
R Dynamic resistance
RM
BR
CL
RM RM
PP
F
D
a
Repetitive pulse current
t
r
= rise time (µs)
t
p
= pulse duration time (µs)
t
r
t
p
1N5908, SM5908 Characteristics
Doc ID 2914 Rev 3 3/9
Table 3. Electrical characteristics - parameter values (T
amb
= 25 °C)
Order code
I
RM
@V
RM
V
BR
@I
R
(1)
1. Pulse tes: t
p
< 50 ms
V
CL
@I
PP
,
10/1000 µs
V
CL
@I
PP
,
10/1000 µs
V
CL
@I
PP
,
10/1000 µs
αT
(2)
2. To calculate V
BR
or V
CL
versus junction temperature, use the following formulas:
V
BR
@ T
J
= V
BR
@ 25°C
x (1 + αT x (T
J
– 25))
V
CL
@ T
J
= V
CL
@ 25°C
x (1 + αT x (T
J
– 25))
C
max min max max max max typ
µA V V mA V A
(3)
3. Surge capability given for both directions
VA
(3)
VA
(3)
10-4/ °C pF
1N5908
300 5 6 1 7.6 30 8 60 8.5 120 5.7 9500
SM5908
Figure 3. Peak pulse power dissipation
versus initial junction temperature
Figure 4. Peak pulse power versus
exponential pulse duration
(T
j
initial = 25 °C)
P
pp
(
W
)
0
500
1000
1500
2000
0 25 50 75 100 125 150 175 200
T
j
(°C)
0.1
1.0
10.0
100.0
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
P
PP
(kW)
T
j
initial = 25 °C
t
P
(ms)
P1-P3P4-P6P7-P9

SM5908

Mfr. #:
Buy SM5908
Manufacturer:
STMicroelectronics
Description:
ESD Suppressors / TVS Diodes 1500W 5.0V Unidirect
Lifecycle:
New from this manufacturer.
Delivery:
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