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BTA308X-800F0Q

P1-P3P4-P6P7-P9P10-P12P13-P13
BTA308X-800F0
3Q Hi-Com Triac
24 March 2017 Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package.
This triac is intended for use in motor control circuits where high blocking voltage, high static and
dynamic dV/dt as well as high dIcom/dt can occur. This "series F0" triac will commutate the full
rated RMS current at the maximum rated junction temperature (T
j(max)
= 150 °C) without the aid of
a snubber.
2. Features and benefits
• 3Q technology for improved noise immunity
• High commutation capability with maximum false trigger immunity
• High immunity to false turn-on by dV/dt
• Isolated mounting base package
• High junction operating temperature capability (T
j(max)
= 150 °C)
• Planar passivated for voltage ruggedness and reliability
• Triggering in three quadrants only
• High voltage capability
• Optimized for highest noise immunity
3. Applications
• Compressor starting control circuits
• General purpose motor controls
• Reversing induction motor controls e.g. vertical axis washing machines
• Applications subject to high temperature (T
j(max)
= 150 °C)
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 800 V
I
T(RMS)
RMS on-state current full sine wave; T
h
≤ 106 °C; Fig. 1;
Fig. 2; Fig. 3
- - 8 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 60 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- - 65 A
T
j
junction temperature - - 150 °C
Static characteristics
WeEn Semiconductors
BTA308X-800F0
3Q Hi-Com Triac
BTA308X-800F0 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 24 March 2017 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
5 - 20 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
5 - 20 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
5 - 20 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - - 50 mA
V
T
on-state voltage I
T
= 10 A; T
j
= 25 °C; Fig. 10 - 1.3 1.65 V
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
500 - - V/µs
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 8 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit; Fig. 12
6 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
321
mb
TO-220F (SOT186A)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BTA308X-800F0 TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
BTA308X-800F0/L03 TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
WeEn Semiconductors
BTA308X-800F0
3Q Hi-Com Triac
BTA308X-800F0 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 24 March 2017 3 / 13
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 800 V
I
T(RMS)
RMS on-state current full sine wave; T
h
≤ 106 °C; Fig. 1; Fig. 2;
Fig. 3
- 8 A
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
- 60 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms - 65 A
I
2
t I
2
t for fusing t
p
= 10 ms; SIN - 18 A²s
dI
T
/dt rate of rise of on-state
current
I
G
= 0.2 A - 100 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
-50
0 50 100 150
0
2
4
6
8
10
T
h
(°C)
(A)
aaf075-001
106 °C
Fig. 1. RMS on-state current as a function of heatsink
temperature; maximum values
10
-2
10
-1
1 10
0
4
8
12
16
20
surge duration (s)
I
T(RMS)
(A)
aaf075-002
f = 50 Hz; T
h
= 106 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
P1-P3P4-P6P7-P9P10-P12P13-P13

BTA308X-800F0Q

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Buy BTA308X-800F0Q
Manufacturer:
WeEn Semiconductors
Description:
Triacs BTA308X-800F0/TO-220F/STANDARD M
Lifecycle:
New from this manufacturer.
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