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BTA308X-800F0Q

P1-P3P4-P6P7-P9P10-P12P13-P13
WeEn Semiconductors
BTA308X-800F0
3Q Hi-Com Triac
BTA308X-800F0 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 24 March 2017 7 / 13
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
5 - 20 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
5 - 20 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
5 - 20 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 8
- - 50 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 8
- - 75 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 8
- - 50 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - - 50 mA
V
T
on-state voltage I
T
= 10 A; T
j
= 25 °C; Fig. 10 - 1.3 1.65 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.7 1 VV
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 150 °C;
Fig. 11
0.2 0.45 - V
V
D
= 800 V; T
j
= 25 °C - - 10 µAI
D
off-state current
V
D
= 800 V; T
j
= 150 °C - - 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
500 - - V/µs
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 8 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit; Fig. 12
6 - - A/ms
WeEn Semiconductors
BTA308X-800F0
3Q Hi-Com Triac
BTA308X-800F0 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 24 March 2017 8 / 13
-50
0 50 100 150
0
1
2
3
I
GT
I
GT(25°C)
T
j
(°C)
aaf075-007
(1)
(2)
(3)
(1) T2- G-
(2) T2+ G-
(3) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
-50
0 50 100 150
0
1
2
3
I
L
I
L(25°C)
T
j
(°C)
aaf075-008
Fig. 8. Normalized latching current as a function of
junction temperature
-50
0 50 100 150
0
1
2
3
T
j
(°C)
I
H
I
H(25°C)
aaf075-009
Fig. 9. Normalized holding current as a function of
junction temperature
0 1 2 3
0
5
10
15
20
25
30
V
T
(V)
I
T
(A)
aaf075-010
(1) (2) (3)
V
o
= 1.001 V; R
s
= 0.0388 Ω
(1) T
j
= 150 °C; typical values
(2) T
j
= 150 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
WeEn Semiconductors
BTA308X-800F0
3Q Hi-Com Triac
BTA308X-800F0 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 24 March 2017 9 / 13
-50
0 50 100 150
0.4
0.8
1.2
1.6
V
GT
V
GT(25°C)
aaf075-011
T
j
(°C)
Fig. 11. Normalized gate trigger voltage as a function of
junction temperature
20
40
60 80 100 120 140 160
1
10
10
2
10
3
T
j
(°C)
dI
com
/dt
(A/ms)
aaf075-012
typ
min
dV
com
/dt=20V/μs
Fig. 12. Rate of change of commutating current as a
function of junction temperature; typical and minimum
values
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BTA308X-800F0Q

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WeEn Semiconductors
Description:
Triacs BTA308X-800F0/TO-220F/STANDARD M
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