© 2007 IXYS All rights reserved
1 - 4
MWI 100-12 A8
20070912a
IXYS reserves the right to change limits, test conditions and dimensions.IXYS reserves the right to change limits, test conditions and dimensions.IXYS reserves the right to change limits, test conditions and dimensions.
Features
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NPT IGBT technology
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low saturation voltage
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low switching losses
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switching frequency up to 30 kHz
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square RBSOA, no latch up
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high short circuit capability
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positive temperature coefficient for
easy parallelling
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MOS input, voltage controlled
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ultra fast free wheeling diodes
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solderable pins for PCB mounting
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package with copper base plate
Advantages
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space savings
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reduced protection circuits
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package designed for wave soldering
Typical Applications
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AC motor control
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AC servo and robot drives
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power supplies
IGBTs
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C 1200 V
V
GES
±
20 V
I
C25
T
C
= 25°C 160 A
I
C80
T
C
= 80°C 110 A
RBSOA V
GE
=
±
15 V; R
G
= 6.8 Ω; T
VJ
= 125°C I
CM
= 200 A
Clamped inductive load; L = 100 µH V
CEK
≤ V
CES
t
SC
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 6.8 Ω; T
VJ
= 125°C 10 µs
(SCSOA) non-repetitive
P
tot
T
C
= 25°C 640 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
I
C
= 100 A; V
GE
= 15 V; T
VJ
= 25°C 2.2 2.6 V
T
VJ
= 125°C 2.5 V
V
GE(th)
I
C
= 4 mA; V
GE
= V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C 6.3 mA
T
VJ
= 125°C 4 mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V 400 nA
t
d(on)
100 ns
t
r
60 ns
t
d(off)
600 ns
t
f
90 ns
E
on
16.1 mJ
E
off
14.6 mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 6.5 nF
Q
Gon
V
CE
= 600 V; V
GE
= 15 V; I
C
= 100 A 475 nC
R
thJC
(per IGBT) 0.19 K/W
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 100 A
V
GE
=
±
15 V; R
G
= 6.8 Ω
I
C25
= 160 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.2 V
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13, 21
14, 20
1
2
3
4
7
8
9
10
11
12
5
6
17
19
15
See outline drawing for pin arrangement
E72873
