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MWI100-12A8

P1-P3P4-P4
© 2007 IXYS All rights reserved
4 - 4
MWI 100-12 A8
20070912a
IXYS reserves the right to change limits, test conditions and dimensions.
0 40 80 120 160
0
5
10
15
20
25
0
2
4
6
8
10
0 50 100 150 200
0
5
10
15
20
25
0
2
5
5
0
7
5
1
0
0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
0 1020304050
0
10
20
30
0
0 1020304050
0
10
20
30
40
0
2
4
6
8
10
12
0 200 400 600 800 1000 1200 1400
0
50
100
150
200
250
I
C
A
I
C
A
E
off
E
on
t
R
G
R
G
V
CE
t
s
mJ
E
on
mJ
E
off
t
n
I
CM
K/W
Z
thJC
V
mJ
n
mJ
ns
E
on
single pulse
diode
IGBT
ns
E
on
t
d(on)
Ω
Ω
A
t
d(on)
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 6.8 Ω
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 6.8 Ω
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 100 A
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 100 A
T
VJ
= 125°C
MWI100-12A8
R
G
= 6:8 Ω
T
VJ
= 125°C
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
P1-P3P4-P4

MWI100-12A8

Mfr. #:
Buy MWI100-12A8
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 100 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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