ZXMC4559DN8
Document number: DS34498 Rev. 7- 2
4 of 11
www.diodes.com
March 2014
© Diodes Incorporated
ZXMC4559DN8
ADVANCE INFORMATION
NEW PRODUCT
Electrical Characteristics N-Channel Q2 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60
⎯ ⎯
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
1.0 µA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0
⎯ ⎯
V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS(ON)
⎯ ⎯
55
mΩ
V
GS
= 10V, I
D
= 4.5A
⎯ ⎯
75
V
GS
= 4.5V, I
D
= 4.0A
Diode Forward Voltage
V
SD
⎯
0.85 1.2 V
V
GS
= 0V, I
S
= 5.5A
Forward Transconductance
g
fs
⎯
10.2
⎯
S
V
DS
=15V,I
D
=4.5A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
1063
⎯
pF
V
DS
= 30V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
⎯
104
⎯
Reverse Transfer Capacitance
C
rss
⎯
64
⎯
Total Gate Charge (V
GS
= 5.0V) Q
g
⎯
11
⎯
nC
V
DS
= 30V, I
D
= 4.5A
Total Gate Charge (V
GS
= 10V) Q
g
⎯
20.4
⎯
Gate-Source Charge
Q
gs
⎯
4.1
⎯
Gate-Drain Charge
Q
gd
⎯
5.1
⎯
Turn-On Delay Time
t
D(on)
⎯
3.5
⎯
nS
V
DD
= 30V, I
D
= 1.0A
V
GS
= 10V, R
G
= 6.0Ω
Turn-On Rise Time
t
r
⎯
4.1
⎯
Turn-Off Delay Time
t
D(off)
⎯
26.2
⎯
Turn-Off Fall Time
t
f
⎯
10.6
⎯
Body Diode Reverse Recovery Time
t
rr
⎯
22
⎯
nS
I
F
= 2.2A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
Q
rr
⎯
21.4
⎯
nC
I
F
= 2.2A, di/dt = 100A/μs
