NCP5385
http://onsemi.com
10
ELECTRICAL CHARACTERISTICS
(0°C < T
A
< 70°C; 0°C < T
J
< 85°C; 10.8 V < V
CC
< 13.2 V; All DAC Codes; C
VCC
= 0.1 F, F
SW
= 400 kHz, unless otherwise stated)
Parameter UnitsMaxTypMinTest Conditions
V
DRP
Adaptive Voltage Positioning Amplifier
Current Sense Input to V
DRP
Gain 60 mV < (CSxCSxN)
< +60 mV, T
A
= 25°C
5.7 6.0 6.3 V/V
Current Sense Input to V
DRP
Output
3dB Bandwidth (Note 1)
C
L
= 330 pF to GND,
R
L
= 10 k to GND
7.2 MHz
Current Sense Input to V
DRP
Output
Slew Rate (Note 1)
V(CSxCSxN) = 25 mV (all
phases), 1.3 V < V
out
< 1.9 V,
C
L
= 330 pF to GND,
Load = ±400 A
3.7 V/s
Current Summing Amp Output Offset
Voltage
CSx – CSxN = 0, CSx =1.0 V 15 +15 mV
Maximum V
DRP
Output Voltage CSx CSxN = 0.12 V
(all phases),
I
SOURCE
= 1.0 mA
3.02 V
Minimum V
DRP
Output Voltage CSx CSxN = 0.12 V
(all phases),
I
SINK
= 1.0 mA
0.5 V
Output Source Current (Note 1) VDRP = 2.9 V 9.0 mA
Output Sink Current (Note 1) VDRP = 1.0 V 2.0 mA
Current Sense Amplifiers
Input Bias Current CSx = CSxN = 1.4 V 200 100 nA
Common Mode Input Voltage Range 0.3 2.0 V
Differential Mode Input Voltage Range 120 120 mV
Input Offset Voltage (Note 1) CSx = CSxN = 1.0 V 3.0 3.0 mV
Current Sense Input to
PWM Comparator Input Gain
0 mV < (CSxCSxN) < 25 mV
T
A
= 25°C
5.7 6.0 6.3 V/V
Oscillator
Switching Frequency Range (Note 1) 100 1000 kHz
Switching Frequency Accuracy
(Note 1)
R
OSC
= 100 k, 2 or 4phase 93.6 104 114.4 kHz
Switching Frequency Accuracy R
OSC
= 49.9 k, 2 or
4phase
184.5 205 225.5 kHz
Switching Frequency Accuracy R
OSC
= 24.9 k, 2 or
4phase
360 400 440 kHz
Switching Frequency Accuracy R
OSC
= 10 k, 2 or 4phase 829 921 1013 kHz
Switching Frequency Accuracy
(Note 1)
R
OSC
= 100 k, 3phase 90 100 110 kHz
Switching Frequency Accuracy R
OSC
= 49.9 k, 3phase 178.2 198 217.8 kHz
Switching Frequency Accuracy R
OSC
= 24.9 k, 3phase 351 390 429 kHz
Switching Frequency Accuracy R
OSC
= 10 k, 3phase 818 909 1000 kHz
R
OSC
Output Voltage 10 k < R
OSC
< 49.9 k 1.92 2.00 2.08 V
R
OSC
Output Voltage (Note 1) 49.9 k < R
OSC
< 100 k 2.00 V
R
OSC2
Threshold Voltage 1.0 V
1. Guaranteed by design. Not tested in production.
NCP5385
http://onsemi.com
11
ELECTRICAL CHARACTERISTICS
(0°C < T
A
< 70°C; 0°C < T
J
< 85°C; 10.8 V < V
CC
< 13.2 V; All DAC Codes; C
VCC
= 0.1 F, F
SW
= 400 kHz, unless otherwise stated)
Parameter UnitsMaxTypMinTest Conditions
Modulators (PWM Comparators)
Minimum Pulse Width Fs = 400 kHz 30 40 ns
Magnitude of the PWM Ramp 1.0 V
0% Duty Cycle COMP voltage when the
PWM outputs remain LO
1.2 V
100% Duty Cycle COMP voltage when the
PWM outputs remain HI
2.3 V
Minimum PWM Linear Duty Cycle
(Note 1)
F
S
= 400 kHz 90 %
PWM Comparator Offset Mismatch
(Note 1)
Between any 2 phases,
F
S
= 400 kHz
40 mV
Phase Angle Error Between adjacent phases,
F
S
= 400 kHz
15 15 °
Propagation Delay (Note 1) Ramp/Comp crossing to Gx
high
20 ns
Propagation Delay (Note 1) Ramp/Comp crossing to Gx
low
20 ns
PWM Outputs
Output High Voltage Sourcing 500 A 3.3 4.0 4.7 V
Output Low Voltage Sinking 500 A 25 100 mV
Rise Time C
L
= 20 pF, Vo = 0.3 to
2.0 V
10 ns
Fall Time C
L
= 20 pF, Vo = Vmax to
0.7 V
10 ns
Output Impedance – LO State Resistance to GND
(Gx = LO)
50
G4 Gate Pin Source Current during
Phase Detect
70 A
Phase Detection Period 50 s
G4 Phase Detect Threshold
Resistance
1.0 k
Gate Driver Enable (DRVON)
Output High Voltage Sourcing 500 A 4.0 5.3 5.5 V
Output Low Voltage Sinking 500 A 50 200 mV
Rise Time C
L
(PCB) = 20 pF,
Vo = 10% to 90%
25 ns
Fall Time C
L
(PCB) = 20 pF,
Vo = 10% to 90%
25 ns
Internal Pulldown Resistance V
CC
< UVLO Threshold 70 140 k
OSC2
OSC2_IN Voltage Threshold 2.5 V
OSC2_IN Decreasing Hysterisis 1.0 V
OSC2_OUT Voltage Output HIGH
@ 1.0 mA
3.0 V
OSC2_OUT Voltage Output LOW
@ 1.0 mA
1.0 V
1. Guaranteed by design. Not tested in production.
NCP5385
http://onsemi.com
12
ELECTRICAL CHARACTERISTICS
(0°C < T
A
< 70°C; 0°C < T
J
< 85°C; 10.8 V < V
CC
< 13.2 V; All DAC Codes; C
VCC
= 0.1 F, F
SW
= 400 kHz, unless otherwise stated)
Parameter UnitsMaxTypMinTest Conditions
VR_RDY (Power Good) Output
Saturation Voltage I
SINK
= 10 mA 0.4 V
Rise Time External pullup of 1.0 k to
1.25 V, C
LOAD
= 20 pF,
Vo = 10% to 90%
150 ns
Output Voltage at Powerup (Note 1) External VR_RDY pullup
resistor of 2.0 k to 5.0 V,
t
R_VCC
3 x t
R_5V
,
100 s t
R_VCC
20 ms
1.0 V
High – Output Leakage Current VR_RDY = 5.5 V via 1.0 K 1.0 A
Upper Threshold Voltage VCORE increasing,
DAC = 1.3 V
300 mV below
DAC
Rising Delay VCORE increasing 0.3 1.40 2.0 ms
Falling Delay VCORE decreasing 5.0 s
SoftStart
SS Pin Source Current ENABLE = HI,
V
SS
PIN
< 1.1 V
5.0 A
SS Pin Source Current ENABLE = HI,
V
SS
PIN
> 1.15 V, VR11 SS
mode only
125 A
SoftStart Ramp Time C
SS
= 0.01 F, DRVON = HI
to V
SS
PIN
= 1.1 V
1.5 2.2 3.0 ms
SS Pin Discharge Voltage ENABLE = LO 50 mV
SoftStart Discharge Time From ENABLE = LO to V
SS
PIN
< max Discharge Voltage,
C
SS
= 0.01 F
5.0 s
VR11 V
BOOT
Threshold Voltage 1.081 V
VR11 Dwell Time at V
BOOT
50 225 900 s
Enable Input
Enable High Input Leakage Current EN = 3.0 V 10 A
Upper Threshold V
UPPER
0.80 0.85 0.90 V
Lower Threshold V
LOWER
0.67 0.75 0.83 V
Total Hysteresis V
UPPER
– V
LOWER
70 100 130 mV
Enable Delay Time Enable transitioning HI to
start of SS voltage rise
0.5 1.5 3.0 ms
Disable Delay Time Enable transitioning Low to
DRVON = Low
200 ns
Current Limit
Current Sense Inputs to I
LIM
Gain
(Note 1)
20 mV < (CSxCSxN) <
60 mV T
A
= 25°C
(all CS channels together)
5.7 6.0 6.3 V/V
ILIM Pin Input Bias Current V
ILIM
= 2.0 V 0.1 1.0 A
ILIM Pin Working Voltage Range
(Note 1)
0.3 2.0 V
ILIM Input Offset Voltage (Note 1) 50 50 mV
1. Guaranteed by design. Not tested in production.

NCP5385MNR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC REG CTRLR INTEL 6OUT 40QFN
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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