IRFR/U3607PbF
2 www.irf.com
S
D
G
I
SD
≤ 46A, di/dt ≤ 1920A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 56A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.12mH
R
G
= 25Ω, I
AS
= 46A, V
GS
=10V. Part not recommended for use
above this value.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
e 75 ––– ––– V
∆V
(BR)DSS
∆T
J
Breakdown Volta
e Temp. Coefficient ––– 0.096 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 7.34 9.0
mΩ
V
GS(th)
Gate Threshold Volta
e 2.0 ––– 4.0 V
I
DSS
Drain-to-Source Leaka
e Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
e ––– ––– 100 nA
Gate-to-Source Reverse Leaka
e ––– ––– -100
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
fs Forward Transconductance 115 ––– ––– S
Q
g
Total Gate Char
e ––– 56 84 nC
Q
gs
Gate-to-Source Char
e ––– 13 –––
Q
gd
Gate-to-Drain ("Miller") Char
e ––– 16 –––
Q
sync
Total Gate Char
e Sync. (Q
g
- Q
gd
)
––– 40 –––
R
G(int)
Internal Gate Resistance ––– 0.55 –––
Ω
t
d(on)
Turn-On Delay Time ––– 16 ––– ns
t
r
Rise Time ––– 110 –––
t
d(off)
Turn-Off Delay Time ––– 43 –––
t
f
Fall Time ––– 96 –––
C
iss
Input Capacitance ––– 3070 ––– pF
C
oss
Output Capacitance ––– 280 –––
C
rss
Reverse Transfer Capacitance ––– 130 –––
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
––– 380 –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
––– 610 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– –––
80
A
(Body Diode)
I
SM
Pulsed Source Current ––– ––– 310
(Body Diode)
V
SD
Diode Forward Volta
e ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 33 50 ns
T
J
= 25°C V
R
= 64V,
––– 39 59
T
J
= 125°C I
F
= 46A
Q
rr
Reverse Recovery Char
e ––– 32 48 nC
T
J
= 25°C
t
=
µs
––– 47 71
T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 1.9 ––– A
T
J
= 25°C
t
on
Forward Turn-On Time Intrinsic turn-on time is ne
li
ible (turn-on is dominated by LS+LD)
Conditions
V
DS
= 50V, I
D
= 46A
I
D
= 46A
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing the
V
DS
= 38V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 0V, V
DS
= 0V to 60V
T
J
= 25°C, I
S
= 46A, V
GS
= 0V
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 46A
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 75V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
I
D
= 46A
R
G
= 6.8Ω
V
GS
= 10V
V
DD
= 49V
I
D
= 46A, V
DS
=0V, V
GS
= 10V
