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IRFR3607TRPBF
P1-P3
P4-P6
P7-P9
P10-P10
IRFR/U3607PbF
www.irf.com
7
Fig 22a.
Switching Time Test Circuit
Fig 22b.
Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
V
GS
Pulse
Width < 1µ
s
D
uty Fact
or < 0.1%
V
DD
V
DS
L
D
D.U
.
T
+
-
Fig 21b.
Unclamped Inductive Waveforms
Fig 21a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
Fig 23a.
Gate Charge Test Circuit
Fig 23b.
Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 20.
Peak
Diode Recovery
dv/dt Test
Circuit
for N-Channel
HEXFET
®
Power MOSFETs
1K
VC
C
DUT
0
L
Circuit
Layout
Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T
. I
SD
Waveform
D.U.T
. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
*
V
GS
=
5V for
Logic Level
Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
•
dv/dt controlled
by R
G
•
Driver same type
as D.U.T.
•
I
SD
controlled
by Duty
Factor "D"
•
D.U.T. - Device
Under Test
D.U.T
Inductor
Current
IRFR/U3607PbF
8
www.irf.com
D-Pak
(TO-252AA)
Part
Marking
Information
D-Pak
(TO-252AA)
Package
Outline
Dimensions
are
shown
in
millimeters
(inches)
Note: For
the most current
drawing please
refer to IR
website at
http://www.irf.com/package/
IRFR/U3607PbF
www.irf.com
9
I-Pak
(TO-251AA)
Package
Outline
Dimensions
are
shown
in
millimeters
(inches)
I-Pak
(TO-251AA)
Part
Marking
Information
Note: For
the most current
drawing please
refer to IR
website at
http://www.irf.com/package/
P1-P3
P4-P6
P7-P9
P10-P10
IRFR3607TRPBF
Mfr. #:
Buy IRFR3607TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg
Lifecycle:
New from this manufacturer.
Delivery:
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