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MMJT9435T3

P1-P3P4-P6
Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 5
1 Publication Order Number:
MMJT9435/D
MMJT9435
Preferred Device
Bipolar Power Transistors
PNP Silicon
Features
• Pb−Free Packages are Available
• Collector −Emitter Sustaining Voltage −
V
CEO(sus)
= 30 Vdc (Min) @ I
C
= 10 mAdc
• High DC Current Gain −
h
FE
= 125 (Min) @ I
C
= 0.8 Adc
= 90 (Min) @ I
C
= 3.0 Adc
• Low Collector −Emitter Saturation Voltage −
V
CE(sat)
= 0.275 Vdc (Max) @ I
C
= 1.2 Adc
= 0.55 Vdc (Max) @ I
C
= 3.0 Adc
• SOT−223 Surface Mount Packaging
• Epoxy Meets UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
SOT−223
CASE 318E
STYLE 1
MARKING
DIAGRAM
AWW
9435
9435 = Specific Device Code
A = Assembly Location
WW = Work Week
Schematic
C 2,4
B 1 E 3
Top View Pinout
C
CEB
4
123
POWER BJT
I
C
= 3.0 AMPERES
BV
CEO
= 30 VOLTS
V
CE(sat)
= 0.275 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
PIN ASSIGNMENT
http://onsemi.com
MMJT9435
http://onsemi.com
2
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
30 Vdc
Collector−Base Voltage V
CB
45 Vdc
Emitter−Base Voltage V
EB
6.0 Vdc
Base Current − Continuous I
B
1.0 Adc
Collector Current − Continuous
Collector Current − Peak
I
C
3.0
5.0
Adc
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Total P
D
@ T
A
= 25°C mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
Total P
D
@ T
A
= 25°C mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
P
D
3.0
24
1.56
0.72
W
mW/°C
W
Operating and Storage Junction Temperature Range T
J
, T
stg
–55 to +150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
− Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
− Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
R
JC
R
JA
R
JA
42
80
174
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds T
L
260 °C
ORDERING INFORMATION
Device Package Shipping
†
MMJT9435T1 SOT−223 1000 / Tape & Reel
MMJT9435T1G SOT−223
(Pb−Free)
1000 / Tape & Reel
MMJT9435T3 SOT−223 4000 / Tape & Reel
MMJT9435T3G SOT−223
(Pb−Free)
4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MMJT9435
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 10 mAdc, I
B
= 0 Adc)
V
CEO(sus)
30 − −
Vdc
Emitter−Base Voltage
(I
E
= 50 Adc, I
C
= 0 Adc)
V
EBO
6.0 − −
Vdc
Collector Cutoff Current
(V
CE
= 25 Vdc, R
BE
= 200 )
(V
CE
= 25 Vdc, R
BE
= 200 , T
J
= 125°C)
I
CER
−
−
−
−
20
200
Adc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc)
I
EBO
− − 10
Adc
ON CHARACTERISTICS (Note 1)
Collector−Emitter Saturation Voltage
(I
C
= 0.8 Adc, I
B
= 20 mAdc)
(I
C
= 1.2 Adc, I
B
= 20 mAdc)
(I
C
= 3.0 Adc, I
B
= 0.3 Adc)
V
CE(sat)
−
−
−
0.155
−
−
0.210
0.275
0.550
Vdc
Base−Emitter Saturation Voltage
(I
C
= 3.0 Adc, I
B
= 0.3 Adc)
V
BE(sat)
− − 1.25
Vdc
Base−Emitter On Voltage
(I
C
= 1.2 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
− − 1.10
Vdc
DC Current Gain
(I
C
= 0.8 Adc, V
CE
= 1.0 Vdc)
(I
C
= 1.2 Adc, V
CE
= 1.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 1.0 Vdc)
h
FE
125
110
90
220
−
−
−
−
−
−
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0 Adc, f = 1.0 MHz)
C
ob
− 100 150
pF
Input Capacitance
(V
EB
= 8.0 Vdc)
C
ib
− 135 −
pF
Current−Gain − Bandwidth Product (Note 2)
(I
C
= 500 mA, V
CE
= 10 V, F
test
= 1.0 MHz)
f
T
− 110 −
MHz
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
2. f
T
= |h
FE
| • f
test
Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region
100 10001.0
I
B
, BASE CURRENT (mA)
1.0
0.50
0.25
I
B
, BASE CURRENT (mA)
100 10001.0
0
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
0
10 10
0.05
0.25
0.75
0.10
0.15
0.20
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
= 3.0 A
1.2 A
0.8 A
0.25 A
0.5 A
I
C
= 0.25 A
1.2 A
0.8 A
0.5 A
P1-P3P4-P6

MMJT9435T3

Mfr. #:
Buy MMJT9435T3
Manufacturer:
ON Semiconductor
Description:
TRANS PNP 30V 3A SOT-223
Lifecycle:
New from this manufacturer.
Delivery:
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