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Figure 3. DC Current Gain
100.1
I
C
, COLLECTOR CURRENT (A)
1000
100
10
H
1.0
, DC CURRENT GAIN
FE
Figure 4. DC Current Gain
Figure 5. “On” Voltages
100.1
I
C
, COLLECTOR CURRENT (A)
10
1.0
0.1
0.01
1.0
V, VOLTAGE (V)
Figure 6. “On” Voltages
100.1
I
C
, COLLECTOR CURRENT (A)
1000
100
10
H
1.0
, DC CURRENT GAIN
FE
100.1
I
C
, COLLECTOR CURRENT (A)
1.0
0.1
0.01
1.0
V, VOLTAGE (V)
V
CE
= 1.0 V
150°C
25°C
−55°C
V
CE
= 4.0 V
150°C
25°C
−55°C
I
C
/I
B
= 10
V
BE(sat)
V
CE(sat)
I
C
/I
B
= 50
V
BE(sat)
V
CE(sat)
Figure 7. V
BE
(
on
)
Voltage Figure 8. Output Capacitance
1.0 100.1
I
C
, COLLECTOR CURRENT (A)
1.2
0.8
0.4
V
R
, REVERSE VOLTAGE (VOLTS)
10 1000.1
V, VOLTAGE (V)
CAPACITANCE (pF)
0
1.0
10
1000
100
V
CE
= 4.0 V
150°C
25°C
−55°C
C
ob
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Figure 9. Current−Gain Bandwidth Product
100.1
I
C
, COLLECTOR CURRENT (A)
1000
10
f
1.0
, CURRENT−GAIN BANDWIDTH PRODUCT
t
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.00.1
10
1.0
0.001
I
10 100
Figure 10. Active Region Safe Operating Area
0.01
0.1
, COLLECTOR CURRENT (AMPS)
C
V
CE
= 10 V
f
test
= 1.0 MHz
T
A
= 25°C
BONDING WIRE LIMIT
THERMAL LIMIT (Single Pulse)
SECONDARY BREAKDOWN LIMIT
0.5 ms
100 ms
5.0 ms
100
Figure 11. Power Derating
15025
T, TEMPERATURE (°C)
4.0
3.0
2.0
1.0
0
P
50
, POWER DISSIPATION (WATTS)
D
75 100 125
T
A
T
C
There are two limitations on the power handling ability of
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
150°C. T
J(pk)
may be calculated from the data in
Figure 12. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by secondary breakdown.
D = 0.5
SINGLE PULSE
0.2
0.1
0.05
0.02
0.01
Figure 12. Thermal Response
0.01 0.10.0001
t, TIME (seconds)
1.0
0.1
0.01
r(t), EFFECTIVE TRANSIENT THERMAL
0.0001
0.001
0.001
10 1001.0
RESISTANCE (NORMALIZED)
1000
R
JA
(t) = r(t)
JA
JA
= 174°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
A
= P
(pk)
JA
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
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PACKAGE DIMENSIONS
H
S
F
A
B
D
G
L
4
123
0.08 (0003)
C
M
K
J
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.249 0.263 6.30 6.70
INCHES
B 0.130 0.145 3.30 3.70
C 0.060 0.068 1.50 1.75
D 0.024 0.035 0.60 0.89
F 0.115 0.126 2.90 3.20
G 0.087 0.094 2.20 2.40
H 0.0008 0.0040 0.020 0.100
J 0.009 0.014 0.24 0.35
K 0.060 0.078 1.50 2.00
L 0.033 0.041 0.85 1.05
M 0 10 0 10
S 0.264 0.287 6.70 7.30
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOT−223 (TO−261)
CASE 318E−04
ISSUE K
1.5
0.059
mm
inches
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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MMJT9435T3

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TRANS PNP 30V 3A SOT-223
Lifecycle:
New from this manufacturer.
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