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74LVTH16652MTD

P1-P3P4-P6P7-P9
www.fairchildsemi.com 4
74LVTH16652
Functional Description
In the transceiver mode, data present at the HIGH imped-
ance port may be stored in either the A or B register or
both.
The select (SAB
n
, SBA
n
) controls can multiplex stored and
real-time.
The examples below demonstrate the four fundamental
bus-management functions that can be performed with the
LVTH16652.
Data on the A or B data bus, or both can be stored in the
internal D flip-flop by LOW-to-HIGH transitions at the
appropriate Clock Inputs (CPAB
n
, CPBA
n
) regardless of
the Select or Output Enable Inputs. When SAB and SBA
are in the real time transfer mode, it is also possible to
store data without using the internal D flip-flops by simulta-
neously enabling OEAB
n
and OEBA
n
. In this configuration
each Output reinforces its Input. Thus when all other data
sources to the two sets of bus lines are in a HIGH imped-
ance state, each set of bus lines will remain at its last state.
Real-Time Transfer Storage
Bus B to Bus A
OEAB
1
OEBA
1
CPAB
1
CPBA
1
SAB
1
SBA
1
OEAB
1
OEBA
1
CPAB
1
CPBA
1
SAB
1
SBA
1
LLXXXL XH XXX
LXX
XX
LH
XX
Real-Time Transfer Transfer Storage
Bus A to Bus B Data to A or B
OEAB
1
OEBA
1
CPAB
1
CPBA
1
SAB
1
SBA
1
OEAB
1
OEBA
1
CPAB
1
CPBA
1
SAB
1
SBA
1
H H X X L X H L H or L H or L H H
5 www.fairchildsemi.com
74LVTH16652
Absolute Maximum Ratings(Note 2)
Recommended Operating Conditions
Note 2: Absolute Maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum rated conditions is not implied.
Note 3: I
O
Absolute Maximum Rating must be observed.
Symbol Parameter Value Conditions Units
V
CC
Supply Voltage −0.5 to +4.6 V
V
I
DC Input Voltage −0.5 to +7.0 V
V
O
DC Output Voltage −0.5 to +7.0 Output in 3-STATE
V
−0.5 to +7.0 Output in HIGH or LOW State (Note 3)
I
IK
DC Input Diode Current −50 V
I
< GND mA
I
OK
DC Output Diode Current −50 V
O
< GND mA
I
O
DC Output Current 64 V
O
> V
CC
Output at HIGH State
mA
128 V
O
> V
CC
Output at LOW State
I
CC
DC Supply Current per Supply Pin ±64 mA
I
GND
DC Ground Current per Ground Pin ±128 mA
T
STG
Storage Temperature −65 to +150 °C
Symbol Parameter Min Max Units
V
CC
Supply Voltage 2.7 3.6 V
V
I
Input Voltage 0 5.5 V
I
OH
HIGH-Level Output Current −32 mA
I
OL
LOW-Level Output Current 64 mA
T
A
Free-Air Operating Temperature −40 85 °C
∆t/∆V Input Edge Rate, V
IN
= 0.8V–2.0V, V
CC
= 3.0V 0 10 ns/V
www.fairchildsemi.com 6
74LVTH16652
DC Electrical Characteristics
Note 4: An external driver must source at least the specified current to switch from LOW-to-HIGH.
Note 5: An external driver must sink at least the specified current to switch from HIGH-to-LOW.
Note 6: This is the increase in supply current for each input that is at the specified voltage level rather than V
CC
or GND.
Dynamic Switching Characteristics (Note 7)
Note 7: Characterized in SOIC package. Guaranteed parameter, but not tested.
Note 8: Max number of outputs defined as (n). n−1 data inputs are driven 0V to 3V. Output under test held LOW.
Symbol Parameter
V
CC
T
A
= −40°C to +85°C
Units Conditions
(V) Min Max
V
IK
Input Clamp Diode Voltage 2.7 −1.2 V I
I
= −18 mA
V
IH
Input HIGH Voltage 2.7–3.6 2.0
V
V
O
≤ 0.1V or
V
IL
Input LOW Voltage 2.7–3.6 0.8 V
O
≥ V
CC
− 0.1V
V
OH
Output HIGH Voltage 2.7–3.6 V
CC
− 0.2
V
I
OH
= −100 µA
2.7 2.4 I
OH
= −8 mA
3.0 2.0 I
OH
= −32 mA
V
OL
Output LOW Voltage 2.7 0.2
V
I
OL
= 100 µA
2.7 0.5 I
OL
= 24 mA
3.0 0.4 I
OL
= 16 mA
3.0 0.5 I
OL
= 32 mA
3.0 0.55 I
OL
= 64 mA
I
I(HOLD)
Bushold Input Minimum Drive 3.0 75
µA
V
I
= 0.8V
−75 V
I
= 2.0V
I
I(OD)
Bushold Input Over-Drive 3.0 500
µA
(Note 4)
Current to Change State −500 (Note 5)
I
I
Input Current 3.6 10
µA
V
I
= 5.5V
Control Pins 3.6 ±1V
I
= 0V or V
CC
Data Pins 3.6
−5V
I
= 0V
1V
I
= V
CC
I
OFF
Power Off Leakage Current 0 ±100 µA0V ≤ V
I
or V
O
≤ 5.5V
I
PU/PD
Power up/down 3-STATE 0–1.5V ±100 µAV
O
= 0.5V to 3.0V
Output Current V
I
= GND or V
CC
I
OZL
3-STATE Output Leakage Current 3.6 −5 µAV
O
= 0.0V
I
OZH
3-STATE Output Leakage Current 3.6 5 µAV
O
= 3.6V
I
OZH
+ 3-STATE Output Leakage Current 3.6 10 µAV
CC
< V
O
≤ 5.5V
I
CCH
Power Supply Current 3.6 0.19 mA Outputs HIGH
I
CCL
Power Supply Current 3.6 5 mA Outputs LOW
I
CCZ
Power Supply Current 3.6 0.19 mA Outputs Disabled
I
CCZ
+ Power Supply Current 3.6 0.19 mA V
CC
≤ V
O
≤ 5.5V,
Outputs Disabled
∆I
CC
Increase in Power Supply Current 3.6 0.2 mA One Input at V
CC
− 0.6V
(Note 6) Other Inputs at V
CC
or GND
Symbol Parameter
V
CC
T
A
= 25°C
Units
Conditions
(V) Min Typ Max
C
L
= 50 pF, R
L
= 500Ω
V
OLP
Quiet Output Maximum Dynamic V
OL
3.3 0.8 V (Note 8)
V
OLV
Quiet Output Minimum Dynamic V
OL
3.3 −0.8 V (Note 8)
P1-P3P4-P6P7-P9

74LVTH16652MTD

Mfr. #:
Buy 74LVTH16652MTD
Manufacturer:
ON Semiconductor
Description:
IC TXRX NON-INVERT 3.6V 56TSSOP
Lifecycle:
New from this manufacturer.
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