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DATA SHEET
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC13b
1997 Jun 20
DISCRETE SEMICONDUCTORS
BSP250
P-channel enhancement mode
vertical D-MOS transistor
1997 Jun 20 2
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP250
FEATURES
High-speed switching
No secondary breakdown
Very low on-resistance.
APPLICATIONS
Low-loss motor and actuator drivers
Power switching.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a SOT223 plastic SMD package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT223
PIN SYMBOL DESCRIPTION
1 g gate
2 d drain
3 s source
4 d drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM121
4
123
Top view
s
d
g
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
drain-source voltage (DC) −−30 V
V
SD
source-drain diode forward voltage I
S
= 1.25 A −−1.6 V
V
GSO
gate-source voltage (DC) open drain −±20 V
V
GSth
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
1 2.8 V
I
D
drain current (DC) −−3A
R
DSon
drain-source on-state resistance I
D
= 1 A; V
GS
= 10 V 0.25
P
tot
total power dissipation T
s
= 100 °C 5W

BSP250,115

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET TAPE-7 MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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