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BSP250,115

P1-P3P4-P6P7-P9P10-P12P13-P13
1997 Jun 20 6
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP250
Fig.8 Source current as a function of source-drain
diode forward voltage.
V
GD
=0.
(1) T
j
= 150 °C.
(2) T
j
=25°C.
(3) T
j
= −55 °C.
handbook, halfpage
0 −0.5 −1 −1.5 −2 −2.5
−6
−2
0
−4
MBE148
I
S
(A)
V
SD
(V)
(1)
(2)
(3)
Fig.9 Drain-source on-state resistance as a
function of gate-source voltage; typical
values.
−V
DS
≥−I
D
×R
DSon
; T
j
=25°C.
(1) I
D
= −0.1 A.
(2) I
D
= −0.5 A.
(3) I
D
= −1A.
(4) I
D
= −3A.
(5) I
D
= −6A.
handbook, halfpage
−100
(1) (4) (5)
V
GS
(V)
R
DSon
(mΩ)
−2 −4 −6 −8
10
4
10
3
10
2
MDA218
(2)(3)
Fig.10 Temperature coefficient of gate-source
threshold voltage.
handbook, halfpage
0.6
0.7
0.8
0.9
1.0
1.2
1.1
0 50 100 150−50
k
T
j
(°C)
MBE138
Typical V
GSth
at I
D
= −1 mA; V
DS
=V
GS
=V
GSth
.
k
V
GSth
at T
j
V
GSth
at 25°C
--------------------------------------
=
Fig.11 Temperature coefficient of drain-source
on-resistance.
Typical R
DSon
at:
(1) I
D
= −1 A; V
GS
= −10 V.
(2) I
D
= −0.5 A; V
GS
= −4.5 V.
k
R
DSon
at T
j
R
DSon
at 25 °C
-----------------------------------------
=
handbook, halfpage
0.6
0.8
1.0
1.2
1.4
1.8
1.6
0 50 100 150−50
k
T
j
(°C)
MBE146
(1)
(2)
1997 Jun 20 7
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP250
Fig.12 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
handbook, full pagewidth
1
10
t
p
(s)
1
MBE147
R
th j-s
(K/W)
10
−1
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
t
p
T
P
t
T
δ
=
δ =
0.75
0.5
0.1
0
0.05
0.33
0.01
0.02
0.2
1997 Jun 20 8
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP250
PACKAGE OUTLINE
UNIT A
1
b
p
cD
E
e
1
H
E
L
p
Qywv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
mm
0.10
0.01
1.8
1.5
0.80
0.60
b
1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6
7.3
6.7
1.1
0.7
0.95
0.85
0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223
96-11-11
97-02-28
w M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v M
A
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
P1-P3P4-P6P7-P9P10-P12P13-P13

BSP250,115

Mfr. #:
Buy BSP250,115
Manufacturer:
Nexperia
Description:
MOSFET TAPE-7 MOSFET
Lifecycle:
New from this manufacturer.
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