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IRLR3714Z

P1-P3P4-P6P7-P9P10-P12
www.irf.com 1
10/7/03
IRLR3714Z
IRLU3714Z
HEXFET
®
Power MOSFET
Notes through are on page 11
Applications
Benefits
l Very Low RDS(on) at 4.5V V
GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
D-Pak
IRLR3714Z
I-Pak
IRLU3714Z
V
DSS
R
DS(on)
max
Qg
20V
15m
4.7nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
P
D
@T
C
= 100°C
Maximum Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 4.28
R
θ
JA
Junction-to-Ambient (PCB Mount)
––– 50 °C/W
R
θ
JA
Junction-to-Ambient ––– 110
0.23
18
300 (1.6mm from case)
-55 to + 175
35
Max.
37
26
144
± 20
20
PD - 94794
IRLR/U3714Z
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V
∆ΒV
DSS
/
∆T
J
Breakdown Voltage Temp. Coefficient ––– 14 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 12 15
m
Ω
––– 20 25
V
GS(th)
Gate Threshold Voltage 1.65 2.1 2.55 V
∆V
GS(th)
/
∆T
J
Gate Threshold Voltage Coefficient ––– -5.2 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 21 ––– ––– S
Q
g
Total Gate Charge ––– 4.7 7.1
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 1.7 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 0.7 ––– nC
Q
gd
Gate-to-Drain Charge ––– 1.7 –––
Q
godr
Gate Charge Overdrive ––– 0.6 ––– See Fig. 16
Q
sw
Switch Char
g
e (Q
gs2
+ Q
gd
)
––– 2.4 –––
Q
oss
Output Charge ––– 2.6 ––– nC
t
d(on)
Turn-On Delay Time ––– 5.4 –––
t
r
Rise Time ––– 7.6 –––
t
d(off)
Turn-Off Delay Time ––– 9.2 ––– ns
t
f
Fall Time ––– 4.3 –––
C
iss
Input Capacitance ––– 560 –––
C
oss
Output Capacitance ––– 180 ––– pF
C
rss
Reverse Transfer Capacitance ––– 95 –––
Avalanche Characteristics
Parameter Units
E
AS
Sin
g
le Pulse Avalanche Ener
gy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Ener
gy
mJ
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– –––
37
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 144
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 21 32 ns
Q
rr
Reverse Recovery Charge ––– 8.5 13 nC
t
on
Forward Turn-On Time
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
Conditions
3.5
Max.
31
12
ƒ = 1.0MHz
I
D
= 12A
V
DS
= 10V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 12A
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 12A
V
DS
= 10V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
Clamped Inductive Load
T
J
= 25°C, I
F
= 12A, V
DD
= 10V
di/dt = 100A/µs
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
MOSFET symbol
–––
V
GS
= 4.5V
Typ.
–––
–––
I
D
= 12A
V
GS
= 0V
V
DS
= 10V
IRLR/U3714Z
www.irf.com 3
Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0 1 10 100
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 25°C
3.0V
0 1 10 100
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 175°C
3.0V
2.0 4.0 6.0 8.0 10.0
V
GS
, Gate-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 10V
60µs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 30A
V
GS
= 10V
V
GS
TOP 10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
V
GS
TOP 10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
P1-P3P4-P6P7-P9P10-P12

IRLR3714Z

Mfr. #:
Buy IRLR3714Z
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 20V 37A DPAK
Lifecycle:
New from this manufacturer.
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