OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BGA8V1BN6E6327XTSA1

P1-P3P4-P6P7-P9P10-P11
Data Sheet Revision 3.3 (min/max)
www.infineon.com 2017-09-14
BGA8V1BN6
BGA8V1BN6
Low Noise Amplifier for LTE Band 42 and Band 43
Features
Application
The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end.
In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to
the basestation the bypass mode can be activated reducing current consumption.
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Block diagram
• Operating frequencies: 3.3 - 3.8 GHz
• Insertion power gain: 15.0 dB
• Insertion Loss in bypass mode: 5.3 dB
•Low noise figure: 1.2dB
• Low current consumption: 4.2 mA
• Multi-state control: OFF-, bypass- and high gain-Mode
• Ultra small TSNP-6-2 leadless package
• RF input and RF output internally matched to 50 Ohm
• No external components necessary
0.7 x 1.1 mm
2
BGA8V1BN6_Blockdiagram.vsd
AI AO
GND
GPIO1
VCC
ESD
GPIO2
Data Sheet 2 Revision 3.3 (min/max)
2017-09-14
BGA8V1BN6
Low Noise Amplifier for LTE Band 42 and Band 43
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table of Contents
Data Sheet 3 Revision 3.3 (min/max)
2017-09-14
BGA8V1BN6
Low Noise Amplifier for LTE Band 42 and Band 43
Features
1 Features
Figure 1 Block Diagram
• Insertion power gain: 15.0 dB
• Insertion Loss in bypass mode: 5.3 dB
•Low noise figure: 1.2dB
• Low current consumption: 4.2 mA
• Operating frequencies: 3.3 - 3.8 GHz
• Multi-state control: OFF-, bypass- and high gain-Mode
• Supply voltage: 1.6 V to 3.1 V
• Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm
2
)
• B9HF Silicon Germanium technology
• RF input and RF output internally matched to 50 Ohm
• No external SMD components necessary
• 2kV HBM ESD protection (including AI-pin)
• Pb-free (RoHS compliant) package
Product Name Marking Package
BGA8V1BN6 X TSNP-6-2
BGA8V1BN6_Blockdiagram.vsd
AI AO
GND
GPIO1
VCC
ESD
GPIO2
P1-P3P4-P6P7-P9P10-P11

BGA8V1BN6E6327XTSA1

Mfr. #:
Buy BGA8V1BN6E6327XTSA1
Manufacturer:
Infineon Technologies
Description:
RF Amplifier RF SILICON MMIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet