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BGA8V1BN6E6327XTSA1

P1-P3P4-P6P7-P9P10-P11
Data Sheet 4 Revision 3.3 (min/max)
2017-09-14
BGA8V1BN6
Low Noise Amplifier for LTE Band 42 and Band 43
Features
Description
The BGA8V1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 3.3 GHz to
3.8 GHz. The LNA provides 15.0 dB gain and 1.2 dB noise figure at a current consumption of 4.2 mA in the
application configuration described in Chapter 4. In bypass mode the LNA provides an insertion loss of 5.3 dB.
The BGA8V1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from
1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode).
Pin Definition and Function
Control Table
Table 1 Pin Definition and Function
Pin No. Name Function
1 GPIO2 Control pin 2
2 VCC DC supply
3 AO LNA output
4 GPIO1 Control pin 1
5GNDGround
6AI LNA input
Table 2 Control Table
GPIO1 GPIO2
OFF Low Low
High Low
Bypass mode Low High
High gain mode High High
Data Sheet 5 Revision 3.3 (min/max)
2017-09-14
BGA8V1BN6
Low Noise Amplifier for LTE Band 42 and Band 43
Maximum Ratings
2 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit. Exposure to conditions at or below absolute
maximum rating but above the specified maximum operation conditions may affect device
reliability and life time. Functionality of the device might not be given under these conditions.
Table 3 Maximum Ratings
Parameter Symbol Values Unit Note or
Test Condition
Min. Typ. Max.
Voltage at pin VCC V
CC
-0.3 – 3.6 V
1)
1) All voltages refer to GND-Node unless otherwise noted
Voltage at pin AI V
AI
-0.3 – 0.9 V –
Voltage at pin AO V
AO
-0.3 – V
CC
+ 0.3 V –
Voltage at GPIO pins V
GPIO
-0.3 – V
CC
+ 0.3 V –
Voltage at pin GND V
GND
-0.3 – 0.3 V –
Current into pin VCC I
CC
––16mA–
RF input power P
IN
– – +25 dBm –
Total power dissipation,
T
S
< 148 °C
2)
2) T
S
is measured on the ground lead at the soldering point
P
tot
––60mW–
Junction temperature T
J
– – 150 °C –
Ambient temperature range T
A
-40 – 85 °C –
Storage temperature range T
STG
-65 – 150 °C –
ESD capability all pins V
ESD_HBM
- - 2000 V according to
JS-001
Data Sheet 6 Revision 3.3 (min/max)
2017-09-14
BGA8V1BN6
Low Noise Amplifier for LTE Band 42 and Band 43
Electrical Characteristics
3 Electrical Characteristics
Table 4 Electrical Characteristics
1)
T
A
= 25 °C, V
CC
= 2.8 V, V
GPIOx,ON
= 2.8 V, V
GPIOx,OFF
= 0 V, f = 3300 - 3800 MHz
1) Based on the application described in chapter 4
Parameter Symbol Values Unit Note or Test Condition
Min. Typ. Max.
Supply voltage V
CC
1.6 2.8 3.1 V –
Control voltages V
GPIOx
1.0 – V
CC
VHigh
0 – 0.4 V Low
Supply current I
CC
– 4.2 5.2 mA High gain mode
– 85 120 µA Bypass mode
–0.12µAOFF-Mode
Insertion power gain
f = 3500 MHz
|S
21
|
2
13.0 15.0 17.0 dB High gain mode
-6.8 -5.3 -3.8 dB Bypass mode
Noise figure
2)
f = 3500 MHz, Z
S
=50Ω
2) PCB losses are subtracted
NF – 1.2 1.7 dB High gain mode
– 5.3 6.8 dB Bypass mode
Input return loss
3)
f = 3500 MHz
3) Verification based on AQL; not 100% tested in production
RL
IN
10 15 – dB High gain mode
10 16 – dB Bypass mode
Output return loss
3)
f = 3500 MHz
RL
OUT
8 11 – dB High gain mode
35–dBBypass mode
Reverse isolation
3)
f = 3500 MHz
1/|S
12
|
2
20 28 – dB High gain mode
6.8 5.3 – dB Bypass mode
Transient time
4)6)
4) To be within 1 dB of the final gain
t
S
– 0.3 3 µs High gain- to bypass-mode
– 3 5 µs Bypass- to High gain-mode
Inband input 1dB-compression
point, f = 3500 MHz
3)
IP
1dB
-19 -15 – dBm High gain mode
-7 -3 – dBm Bypass mode
Inband input 3
rd
-order
intercept point
3)5)
f
1
= 3500 MHz, f
2
= f
1
+/- 1 MHz
5) Input power HG = -30 dBm for each tone; Input power BP = -10 dBm for each tone
IIP
3
-8 -3 – dBm High gain mode
1 6 – dBm Bypass mode
Phase discontinuity between
ON- and bypass-mode
3)
-6 – 6 ° Part to part variation after
compensation in Base Band
with constant value
Stability
6)
6) Guaranteed by device design; not tested in production
k > 1 – – f=20MHz ... 10GHz
P1-P3P4-P6P7-P9P10-P11

BGA8V1BN6E6327XTSA1

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Manufacturer:
Infineon Technologies
Description:
RF Amplifier RF SILICON MMIC
Lifecycle:
New from this manufacturer.
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