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MRF7S15100HSR3

P1-P3P4-P6P7-P9P10-P12P13-P13
10
RF Device Data
Freescale Semiconductor
MRF7S15100HR3 MRF7S15100HSR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
36
P3dB = 51.63 dBm (146 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 600 mA, Pulsed CW
10 µsec(on), 10% Duty Cycle, f = 1500 MHz
51
49
47
37
Actual
Ideal
52
50
46
P
out
, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
48
53
54
55
56
35343327 3231302928
P1dB = 50.95 dBm (125 W)
Test Impedances per Compression Level
Z
source
Ω
Z
load
Ω
P1dB 2.02 + j6.21 2.00 - j3.65
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V
MRF7S15100HR3 MRF7S15100HSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465-06
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.335 1.345 33.91 34.16
B 0.380 0.390 9.65 9.91
C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
G 1.100 BSC 27.94 BSC
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
N 0.772 0.788 19.60 20.00
Q .118 .138 3.00 3.51
R 0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S 0.365 0.375 9.27 9.52
M 0.774 0.786 19.66 19.96
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
Q2X
M
A
M
bbb B
M
T
M
A
M
bbb B
M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc B
M
T
M
A
M
bbb B
M
T
AA
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
aaa B
M
T
(INSULATOR)
R
M
A
M
ccc B
M
T
(LID)
NI-780
MRF7S15100HR3
CASE 465A-06
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.805 0.815 20.45 20.70
B 0.380 0.390 9.65 9.91
C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
M 0.774 0.786 19.61 20.02
R 0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
aaa 0.005 REF 0.127 REF
S 0.365 0.375 9.27 9.52
N 0.772 0.788 19.61 20.02
U −−− 0.040 −−− 1.02
Z −−− 0.030 −−− 0.76
M
A
M
bbb B
M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc B
M
T
M
A
M
bbb B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc B
M
T
M
A
M
aaa B
M
T
R
(LID)
S
(INSULATOR)
NI-780S
MRF7S15100HSR3
12
RF Device Data
Freescale Semiconductor
MRF7S15100HR3 MRF7S15100HSR3
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0 July 2008 • Initial Release of Data Sheet
1 Feb. 2009 • Added Fig. 9, MTTF versus Junction Temperature, p. 7
2 June 2009 • Added Maximum CW limit and temperature derating factor to the Maximum Ratings table, p. 1
• Fig. 10, CCDF W- CDMA IQ Magnitude Clipping, Single -Carrier Test Signal and Fig. 11, Single - Carrier
W-CDMA Spectrum updated to show the undistorted input test signal, p. 8
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,
Tools and Software, p. 12
P1-P3P4-P6P7-P9P10-P12P13-P13

MRF7S15100HSR3

Mfr. #:
Buy MRF7S15100HSR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV7 1.5GHZ 28V23W NI780S
Lifecycle:
New from this manufacturer.
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