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MRF7S15100HSR3

P1-P3P4-P6P7-P9P10-P12P13-P13
4
RF Device Data
Freescale Semiconductor
MRF7S15100HR3 MRF7S15100HSR3
Figure 1. MRF7S15100HR3(HSR3) Test Circuit Schematic
Z15 1.330″ x 0.538″ Microstrip
Z16 0.270″ x 0.280″ Microstrip
Z17 0.187″ x 0.150″ Microstrip
Z18 0.084″ x 0.042″ Microstrip
Z19 0.184″ x 0.292″ Microstrip
Z20 0.084″ x 0.066″ Microstrip
Z21 0.886″ x 0.194″ Microstrip
Z22 0.300″ x 0.084″ Microstrip
Z23 0.084″ x 0.215″ Microstrip
Z24 0.221″ x 0.075″ Microstrip
Z25 0.084″ x 0.175″ Microstrip
Z26, Z27 0.200″ x 0.525″ Microstrip
Z28, Z29 0.235″ x 0.102″ Microstrip
PCB Arlon CuClad 250GX- 0300 -55-22, 0.030″, ε
r
= 2.55
Z1 0.084″ x 0.078″ Microstrip
Z2 0.149″ x 0.153″ Microstrip
Z3 0.149″ x 0.303″ Microstrip
Z4 0.149″ x 0.065″ Microstrip
Z5 0.084″ x 0.146″ Microstrip
Z6 0.084″ x 0.104″ Microstrip
Z7 0.218″ x 0.080″ Microstrip
Z8 0.084″ x 0.206″ Microstrip
Z9 0.224″ x 0.085″ Microstrip
Z10 0.084″ x 0.369″ Microstrip
Z11 1.288″ x 0.206″ Microstrip
Z12 1.288″ x 0.144″ Microstrip
Z13 1.288″ x 0.369″ Microstrip
Z14 1.330″ x 0.112″ Microstrip
Z1
RF
INPUT
Z2 Z8
DUT
V
BIAS
V
SUPPLY
C8 C10
+
Z9Z6Z3 Z4
B1
C4
C5
+
R3
R2
L3
C2
L2
C1
C3
Z5 Z7 Z10 Z11 Z12 Z13
R1
L1
C6
RF
OUTPUT
Z23Z20Z19Z18Z17Z16Z15Z14
Z26
Z22Z21
Z27
Z28
Z29
Z24 Z25
C11 C9
V
SUPPLY
C7 C12 C13
Table 5. MRF7S15100HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Short Ferrite Bead 2743019447 Fair-Rite
C1, C6, C7, C8 15 pF Chip Capacitors ATC100B150JT500XT ATC
C2 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC
C3 10 pF Chip Capacitor ATC100B100JT500XT ATC
C4, C9, C13 6.8 µF, 50 V Chip Capacitors C4532JB1H685MT TDK
C5, C10 100 µF, 50 V Electrolytic Capacitors 222215371101 Vishay
C11, C12 2.2 µF, 50 V Chip Capacitors C3225JB2A225MT TDK
L1, L2, L3 7.15 nH Inductors 1606-TLC Coilcraft
R1, R2 100 Ω, 1/4 W Chip Resistors CRCW12061000FKEA Vishay
R3 10 KΩ, 1/4 W Chip Resistor CRCW12061002FKEA Vishay
MRF7S15100HR3 MRF7S15100HSR3
5
RF Device Data
Freescale Semiconductor
Figure 2. MRF7S15100HR3(HSR3) Test Circuit Component Layout
CUT OUT AREA
R3
MRF7S15100H/HS Rev. 3
B1
R2
C4
C3
R1
L1
C2
C1
L3 L2
C8
C11 C9
C10
C6
C13C12
C7
C5
6
RF Device Data
Freescale Semiconductor
MRF7S15100HR3 MRF7S15100HSR3
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
1400
f, FREQUENCY (MHz)
Figure 3. Output Peak-to - Average Ratio Compression (PARC)
Broadband Performance @ P
out
= 23 Watts Avg.
−25
−5
−10
−15
−20
19
18
17
−41
35
34
33
32
−36
−37
−38
−39
η
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
16
15
14
13
12
11
10
1425 1450 1475 1500 1525 1550 1575 1600
31
−40
−30
PARC (dB)
−1.1
−0.7
−0.8
−0.9
−1
−1.2
ACPR (dBc)
Figure 4. CW Power Gain versus Output Power
100
20
1
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 28 Vdc, f = 1490 MHz
CW Measurements
17
16
10 200
G
ps
, POWER GAIN (dB)
18
I
DQ
= 900 mA
750 mA
Figure 5. Intermodulation Distortion Products
versus Tone Spacing
TWO−TONE SPACING (MHz)
10
−70
−10
−20
−30
−50
1 100
IMD, INTERMODULATION DISTORTION (dBc)
−40
IM3−U
IM3−L
IM5−U
IM5−L
IM7−L
IM7−U
Figure 6. Output Peak -to - Average Ratio
Compression (PARC) versus Output Power
1
P
out
, OUTPUT POWER (WATTS)
−1
−3
−5
25
0
−2
−4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
15
35 45 65
25
55
50
45
40
35
30
η
D
, DRAIN EFFICIENCY (%)
−1 dB = 24.14 W
−2 dB = 32.65 W
−3 dB = 43.29 W
55
η
D
ACPR
PARC
ACPR (dBc)
−45
−15
−20
−25
−35
−30
−40
21
G
ps
, POWER GAIN (dB)
20
19
18
17
16
15
G
ps
20
IRL
G
ps
ACPR
η
D
PARC
V
DD
= 28 Vdc, P
out
= 23 W (Avg.)
I
DQ
= 600 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
−60
V
DD
= 28 Vdc, P
out
= 90 W (PEP), I
DQ
= 600 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1490 MHz
V
DD
= 28 Vdc, I
DQ
= 600 mA, f = 1490 MHz, Single−Carrier
W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
19
600 mA
450 mA
300 mA
P1-P3P4-P6P7-P9P10-P12P13-P13

MRF7S15100HSR3

Mfr. #:
Buy MRF7S15100HSR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV7 1.5GHZ 28V23W NI780S
Lifecycle:
New from this manufacturer.
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