NXP Semiconductors Product specification
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the GHz
range, such as satellite TV tuners and
portable RF communications
equipment.
DESCRIPTION
NPN silicon transistor in a 4-pin,
dual-emitter SOT143B plastic
package. Available with in-line emitter
pinning (BFG67) and cross emitter
pinning (BFG67/X). Version with
reverse pinning (BFG67/XR) also
available on request.
MARKING
TYPE NUMBER CODE
BFG67 (Fig.1) V3%
BFG67/X (Fig.1) %MV
BFG67/XR (Fig.2) V26
PINNING
PIN
DESCRIPTION
BFG67 BFG67/X BFG67/XR
1 collector collector collector
2 base emitter emitter
3 emitter base base
4 emitter emitter emitter
Fig.1 Simplified outline
SOT143B.
handbook, 2 columns
Top view
MSB014
12
34
Fig.2 Simplified outline
SOT143R.
handbook, 2 columns
Top view
MSB035
12
43
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CEO
collector-emitter voltage open base − 10 V
I
C
collector current (DC) − 50 mA
P
tot
total power dissipation T
s
≤ 65 °C − 300 mW
C
re
feedback capacitance I
C
=i
c
= 0; V
CB
= 8 V; f = 1 MHz 0.5 − pF
f
T
transition frequency I
C
= 15 mA; V
CE
= 8 V; f = 500 MHz 8 − GHz
G
UM
maximum unilateral power
gain
I
C
= 15 mA; V
CE
=8V;
T
amb
=25°C; f = 1 GHz
17 − dB
F noise figure Γ
s
= Γ
opt
; I
C
= 5 mA; V
CE
=8V;
T
amb
=25°C; f = 1 GHz
1.3 − dB
Γ
s
= Γ
opt
; I
C
= 5 mA; V
CE
=8V;
T
amb
=25°C; f = 2 GHz
2.2 − dB
Rev. 05 - 23 November 2007
