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BFG67,235
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
NXP
Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
Fig.18 Common emitter reverse transmission coefficient (S
12
).
V
CE
= 8 V; I
C
= 15 mA.
handbook, full pagewidth
handbook, full pagewidth
MBB312
0.2
0.5
1
2
5
10
∞
0.2
0.5
1
2
5
10
0
+
j
−
j
1
0.2
10
5
2
0.5
3 GHz
40 MHz
Fig.19 Common emitter output reflection coefficient (S
22
).
handbook, full pagewidth
MBB311
+ϕ
−ϕ
0
°
30
°
60
°
90
°
120
°
150
°
180
°
150
°
120
°
90
°
60
°
30
°
3 GHz
0.4
0.2
40 MHz
0.5
0.3
0.1
V
CE
= 8 V; I
C
= 15 mA.
Rev. 05 - 23 November 2007
10 of 14
NXP
Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
P
ACKAGE OUTLINES
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
1.1
0.9
A
1
max
0.1
b
1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
H
E
y
w
v
Q
2.5
2.1
0.45
0.15
0.55
0.45
e
1.9
e
1
1.7
L
p
0.1
0.1
0.2
b
p
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143B
97-02-28
0
1
2 mm
scale
Plastic surface mounted package; 4 leads
SOT143B
D
H
E
E
A
B
v
M
A
X
A
A
1
L
p
Q
detail X
c
y
w
M
e
1
e
B
2
1
3
4
b
1
b
p
Rev. 05 - 23 November 2007
11 of 14
NXP
Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
1.1
0.9
A
1
max
0.1
b
1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
H
E
y
w
v
Q
2.5
2.1
0.55
0.25
0.45
0.25
e
1.9
e
1
1.7
L
p
0.1
0.1
0.2
b
p
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143R
97-03-10
0
1
2 mm
scale
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
D
H
E
E
A
B
v
M
A
X
A
A
1
L
p
Q
detail X
c
y
w
M
e
1
e
B
1
2
4
3
b
1
b
p
Rev. 05 - 23 November 2007
12 of 14
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BFG67,235
Mfr. #:
Buy BFG67,235
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors Single NPN 10V 50mA 380mW 60 8GHz
Lifecycle:
New from this manufacturer.
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Products related to this Datasheet
BFG67,235
BFG67/X,215