IRLW510ATM Datasheet IRLW510ATM, IRLI510ATU | P1-P3

IRLW/I510A

BV

DSS

= 100 V

R

DS(on)

= 0.44Ω

I

D

= 5.6 A

100

5.6

4.0

20

±

20

62

5.6

3.7

6.5

3.8

37

0.25

- 55 to +175

300

4.1

40

62.5

--

1

♦

Avalanche Rugged Technology

♦

Rugged Gate Oxide Technology

♦

Lower Input Capacitance

♦

Improved Gate Charge

♦

Extended Safe Operating Area

♦

175

°

C Operating Temperature

♦

Lower Leakage Current: 10

µ

A (Max.) @ V

DS

= 100V

♦

Lower R

DS(ON)

: 0.336

Ω

(Typ.)

Thermal Resistance

Junction-to-Case

Junction-to-Ambient

R

θ

JC

R

θJA

R

θJA

°C/W

Characteristic Max. UnitsSymbol Typ.

FEATURES

D

2

-PAK

1. Gate 2. Drain 3. Source

1

3

2

1

2

3

I

2

-PAK

*

When mounted on the minimum pad size recommended (PCB Mount).

Absolute Maximum Ratings

Drain-to-Source Voltage

Continuous Drain Current (T

C

=25°C)

Continuous Drain Current (T

C

=100°C)

Drain Current-Pulsed

(1)

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

(2)

Avalanche Current

(1)

Repetitive Avalanche Energy

(1)

Peak Diode Recovery dv/dt

(3)

Total Power Dissipation (T

A

=25°C)

Total Power Dissipation (T

C

=25°C)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8

from case for 5-seconds

Characteristic Value UnitsSymbol

I

DM

V

GS

E

AS

I

AR

E

AR

dv/dt

P

D

I

D

T

J

, T

STG

T

L

A

V

mJ

A

mJ

V/ns

W

W/°C

A

°C

V

DSS

V

*

Rev. B

IRLW/I510A

100

--

1.0

--

0.1

--

50

20

8

10

17

8

5.5

0.9

3.5

--

2.0

100

-100

10

100

0.44

--

235

65

25

30

45

25

8

--

3.2

180

--

85

0.23

5.6

20

1.5

--

Notes;

(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

(2) L=3mH, I

AS

=5.6A, V

DD

=25V, R

G

=27

Ω

, Starting T

J

=25

°

C

(3) I

SD

≤

5.6A, di/dt

≤

250A/

µ

s, V

DD

≤

BV

DSS

, Starting T

J

=25

°

C

(4) Pulse Test: Pulse Width = 250

µ

s, Duty Cycle

≤

2%

(5) Essentially Independent of Operating Temperature

2

Electrical Characteristics

(T

C

=25°C unless otherwise specified)

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

CharacteristicSymbol

Max. UnitsTyp.Min. Test Condition

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain (

Miller ) Charge

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

BV

DSS

∆

BV/

∆

T

J

V

GS(th)

R

DS(on)

I

GSS

I

DSS

V

V/

°

C

V

nA

µ

A

Ω

pF

ns

nC

--

V

GS

=0V,I

D

=250

µ

A

I

D

=250

µ

A

See Fig 7

V

DS

=5V,I

D

=250

µ

A

V

GS

=20V

V

GS

=-20V

V

DS

=100V

V

DS

=80V,T

C

=150

°

C

V

GS

=5V,I

D

=2.8A

(4)

V

DS

=40V,I

D

=2.8A

(4)

V

DD

=50V,I

D

=5.6A,

R

G

=12

Ω

See Fig 13

(4) (5)

V

DS

=80V,V

GS

=5V,

I

D

=5.6A

See Fig 6 & Fig 12

(4) (5)

Drain-to-Source Leakage Current

V

GS

=0V,V

DS

=25V,f =1MHz

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current

Pulsed-Source Current

(1)

Diode Forward Voltage

(4)

Reverse Recovery Time

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

Q

rr

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

--

A

V

ns

µ

C

Integral reverse pn-diode

in the MOSFET

T

J

=25

°

C,I

S

=5.6A,V

GS

=0V

T

J

=25

°

C,I

F

=5.6A

di

F

/dt=100A/

µ

s

(4)

IRLW/I510A

10

-1

10

0

10

1

10

-1

10

0

10

1

@ Notes :

1. 250

µ

s Pulse Test

2. T

C

= 25

o

C

V

GS

Top : 7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

4.0 V

3.5 V

Bottom : 3.0 V

I

D

, Drain Current [A]

V

DS

, Drain-Source Voltage [V]

0246810

10

-1

10

0

10

1

25

o

C

175

o

C

- 55

o

C

@ Notes :

1. V

GS

= 0 V

2. V

DS

= 40 V

3. 250

µ

s Pulse Test

I

D

, Drain Current [A]

V

GS

, Gate-Source Voltage [V]

0 5 10 15 20

0.0

0.2

0.4

0.6

0.8

@ Note : T

J

= 25

o

C

V

GS

= 10 V

V

GS

= 5 V

R

DS(on)

, [

Ω

]

Drain-Source On-Resistance

I

D

, Drain Current [A]

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

10

-1

10

0

10

1

175

o

C

25

o

C

@ Notes :

1. V

GS

= 0 V

2. 250

µ

s Pulse Test

I

DR

, Reverse Drain Current [A]

V

SD

, Source-Drain Voltage [V]

0246

0

2

4

6

V

DS

= 80 V

V

DS

= 50 V

V

DS

= 20 V

@ Notes : I

D

= 5.6 A

V

GS

, Gate-Source Voltage [V]

Q

G

, Total Gate Charge [nC]

10

0

10

1

0

70

140

210

280

350

C

iss

= C

gs

+ C

gd

(

C

ds

= shorted

)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

@ Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitance [pF]

V

DS

, Drain-Source Voltage [V]

3

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

IRLW510ATM

IRLW510ATM

Products related to this Datasheet