FDH50N50 Datasheet FDH50N50 | P1-P3

1

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FDH50N50 / FDA50N50 Rev. A

FDH50N50 / FDA50N50 500V N-Channel MOSFET

UniFET

TM

FDH50N50 / FDA50N50

500V N-Channel MOSFET

Features

• 48A, 500V, R

DS(on)

= 0.105Ω @V

GS

= 10 V

• Low gate charge ( typical 105 nC)

• Low C

rss

( typical 45 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

This advanced technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

cient switched mode power supplies and active power factor

correction.

Absolute Maximum Ratings

Thermal Characteristics

!

"

!

"

!

"

!

"

S

D

G

S

D

TO-247

FDH Series

GSD

TO-3P

FDA Series

Symbol Parameter FDH50N50/FDA50N50 Unit

V

DSS

Drain-Source Voltage 500 V

I

D

Drain Current - Continuous (T

C

= 25°C)

- Continuous (T

C

= 100°C)

48

30.8

A

I

DM

Drain Current - Pulsed

(Note 1)

192 A

V

GSS

Gate-Source voltage ±20 V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

1868 mJ

I

AR

Avalanche Current

(Note 1)

48 A

E

AR

Repetitive Avalanche Energy

(Note 1)

62.5 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

P

D

Power Dissipation (T

C

= 25°C)

- Derate above 25°C

625

5

W

W/°C

T

J,

T

STG

Operating and Storage Temperature Range -55 to +150 °C

T

L

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300 °C

Symbol Parameter Min. Max. Unit

R

θJC

Thermal Resistance, Junction-to-Case -- 0.2 °C/W

R

θCS

Thermal Resistance, Case-to-Sink 0.24 -- °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient -- 40 °C/W

2

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FDH50N50 / FDA50N50 Rev. A

FDH50N50 / FDA50N50 500V N-Channel MOSFET

Package Marking and Ordering Information

Electrical Characteristics

T

C

= 25°C unless otherwise noted

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1.46mH, I

AS

= 48A, V

DD

= 50V, R

G

= 25Ω, Starting T

J

= 25°C

3. I

SD

≤ 48A, di/dt ≤ 200A/µs, V

DD

≤ BV

DSS

, Starting T

J

= 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Device Marking Device Package Reel Size Tape Width Quantity

FDH50N50 FDH50N50 TO-247 - - 30

FDA50N50 FDA50N50 TO-3P - - 30

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

Drain-Source Breakdown Voltage V

GS

= 0V, I

D

= 250µA 500 -- -- V

∆BV

DSS

/ ∆T

J

Breakdown Voltage Temperature

Coefficient

I

D

= 250µA, Referenced to 25°C--0.5--V/°C

I

DSS

Zero Gate Voltage Drain Current V

DS

= 500V, V

GS

= 0V

V

DS

= 400V, T

C

= 125°C

--

25

250

µA

I

GSSF

Gate-Body Leakage Current, Forward V

GS

= 20V, V

DS

= 0V -- -- 100 nA

I

GSSR

Gate-Body Leakage Current, Reverse V

GS

= -20V, V

DS

= 0V -- -- -100 nA

On Characteristics

V

GS(th)

Gate Threshold Voltage V

DS

= V

GS

, I

D

= 250µA3.0--5.0V

R

DS(on)

Static Drain-Source

On-Resistance

V

GS

= 10V, I

D

= 24A -- 0.089 0.105 Ω

g

FS

Forward Transconductance V

DS

= 40V, I

D

= 48A

(Note 4)

-- 20 -- S

Dynamic Characteristics

C

iss

Input Capacitance V

DS

= 25V, V

GS

= 0V,

f = 1.0MHz

-- 4979 6460 pF

C

oss

Output Capacitance -- 760 1000 pF

C

rss

Reverse Transfer Capacitance -- 50 65 pF

C

oss

Output Capacitance V

DS

= 400V, V

GS

= 0V, f = 1.0MHz -- 161 -- pF

C

oss

eff. Effective Output Capacitance V

DS

= 0V to 400V, V

GS

= 0V -- 342 -- pF

Switching Characteristics

t

d(on)

Turn-On Delay Time V

DD

= 250V, I

D

= 48A

R

G

= 25Ω

(Note 4, 5)

-- 105 220 ns

t

r

Turn-On Rise Time -- 360 730 ns

t

d(off)

Turn-Off Delay Time -- 225 460 ns

t

f

Turn-Off Fall Time -- 230 470 ns

Q

g

Total Gate Charge V

DS

= 400V, I

D

= 48A

V

GS

= 10V

(Note 4, 5)

-- 105 137 nC

Q

gs

Gate-Source Charge -- 33 -- nC

Q

gd

Gate-Drain Charge -- 45 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current -- -- 48 A

I

SM

Maximum Pulsed Drain-Source Diode Forward Current -- -- 192 A

V

SD

Drain-Source Diode Forward Voltage V

GS

= 0V, I

S

= 48A -- -- 1.4 V

t

rr

Reverse Recovery Time V

GS

= 0V, I

S

= 48A

dI

F

/dt =100A/µs

(Note 4)

-- 580 -- ns

Q

rr

Reverse Recovery Charge -- 10 -- µC

3

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FDH50N50 / FDA50N50 Rev. A

FDH50N50 / FDA50N50 500V N-Channel MOSFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10

-1

10

0

10

1

10

-1

10

0

10

1

10

2

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

Notes :

1. 250

µ

s Pulse Test

2. T

C

= 25

o

C

!

I

D

, Drain Current [A]

V

DS

, Drain-Source Voltage [V]

45678910

0.1

1

10

100

Notes :

1. V

DS

= 40V

2. 250

µ

s Pulse Test

-55

o

C

!

150

o

C

!

25

o

C

!

I

D

, Drain Current [A]

V

GS

, Gate-Source Voltage [V]

0 25 50 75 100 125 150 175

0.0

0.1

0.2

0.3

0.4

V

GS

= 20V

V

GS

= 10V

Note : T

J

= 25

o

C

R

DS(ON)

[

Ω

],

Drain-Source On-Resistance

I

D

, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

0

40

80

120

160

25

o

C

150

o

C

Notes :

1. V

GS

= 0V

2. 250

µ

s Pulse Test

I

DR

, Reverse Drain Current [A]

V

SD

, Source-Drain Voltage [V]

10

-1

10

0

10

1

10

2

0

2,000

4,000

6,000

8,000

10,000

12,000

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitance [pF]

V

DS

, Drain-Source Voltage [V]

0 20 40 60 80 100 120

0

2

4

6

8

10

12

V

DS

= 250V

V

DS

= 100V

V

DS

= 400V

Note : I

D

= 48A

V

GS

, Gate-Source Voltage [V]

Q

G

, Total Gate Charge [nC]

FDH50N50

FDH50N50

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