4
www.fairchildsemi.com
FDH50N50 / FDA50N50 Rev. A
FDH50N50 / FDA50N50 500V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Typical Drain Current Slope Figure 12. Typical Drain-Source Voltage
vs. Gate Resistance Slope vs. Gate Resistance
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
µ
A
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
Notes :
1. V
GS
= 10 V
2. I
D
= 24 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
10 us
DC
10 ms
1 ms
100 us
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
25 50 75 100 125 150
0
10
20
30
40
50
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]
0 5 10 15 20 25 30 35 40 45 50
0
5
10
15
20
25
30
35
40
45
Notes :
1. V
DS
= 400 V
2. V
GS
= 12 V
3. I
D
= 25A
4. T
J
= 125
o
C
!
dv/dt(off)
dv/dt(on)
dv/dt [V/nS]
R
G
, Gate resistance [
Ω
]
0 5 10 15 20 25 30 35 40 45 50
0
500
1,000
1,500
2,000
2,500
3,000
3,500
4,000
Notes :
1. V
DS
= 400 V
2. V
GS
= 12 V
3. I
D
= 25A
4. T
J
= 125
o
C
di/dt(off)
di/dt(on)
di/dt [A/
µ
S]
R
G
, Gate resistance [
Ω
]
