IRFZ24NPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient 0.052 V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance 0.07 Ω V
GS
= 10V, I
D
= 10A
V
GS(th)
Gate Threshold Voltage 2.0 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 4.5 S V
DS
= 25V, I
D
= 10A
25 V
DS
= 55V, V
GS
= 0V
250 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage 100 V
GS
= 20V
Gate-to-Source Reverse Leakage -100 V
GS
= -20V
Q
g
Total Gate Charge 20 I
D
= 10A
Q
gs
Gate-to-Source Charge 5.3 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge 7.6 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time 4.9 V
DD
= 28V
t
r
Rise Time 34 I
D
= 10A
t
d(off)
Turn-Off Delay Time 19 R
G
= 24Ω
t
f
Fall Time 27 R
D
= 2.6Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance 370 V
GS
= 0V
C
oss
Output Capacitance 140 pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance 65 = 1.0MHz, See Fig. 5
nH
µA
nA
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
S
Internal Source Inductance
ns
S
D
G
4.5
7.5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 10A, di/dt ≤ 280A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
V
DD
= 25V, starting T
J
= 25°C, L = 1.0mH
R
G
= 25Ω, I
AS
= 10A. (See Figure 12)
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage 1.3 V T
J
= 25°C, I
S
= 10A, V
GS
= 0V
t
rr
Reverse Recovery Time 56 83 ns T
J
= 25°C, I
F
= 10A
Q
rr
Reverse RecoveryCharge 120 180 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
68
17
S
D
G
