IRFZ24NPBF

P1-P3 P4-P6 P7-P9

IRFZ24NPbF

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Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0

100

200

300

400

500

600

700

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

4

8

12

16

20

048121620

Q , Total Gate Charge (nC)

G

V , Gate-to-Source Voltage (V)

GS

A

FOR TEST CIRCUIT

SEE FIGURE 13

V = 44V

V = 28V

I = 10A

DS

DS

D

1

10

100

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

T = 25°C

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

A

T = 175°C

J

1

10

100

1000

1 10 100

V , Drain-to-Source Voltage (V)

DS

I , Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY R

D

DS(on)

10µs

100µs

1ms

10ms

A

T = 25°C

T = 175°C

Single Pulse

C

J

IRFZ24NPbF

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Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10b. Switching Time Waveforms

R

D

V

GS

R

G

D.U.T.

10V

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

+

-

V

DD

0

4

8

12

16

20

25 50 75 100 125 150 175

C

I , Drain Current (Amps)

D

T , Case Temperature (°C)

A

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

t , Rectangular Pulse Duration (sec)

1

thJC

D = 0.50

0.01

0.02

0.05

0.10

0.20

SINGLE PULSE

(THERMAL RESPONSE)

A

Thermal Response (Z )

P

t

2

1

t

DM

Notes: 

1. Duty factor D = t / t

2. Peak T = P x Z + T 

12

J

DM

thJC

C 

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Fig 12a. Unclamped Inductive Test Circuit

V

DS

L

D.U.T.

V

DD

I

AS

t

p

0.01Ω

R

G

+

-

t

p

V

DS

I

AS

V

DD

V

(BR)DSS

10 V

Fig 12b. Unclamped Inductive Waveforms

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Fig 13b. Gate Charge Test Circuit

Q

G

Q

GS

Q

GD

V

G

Charge

10 V

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

0

20

40

60

80

100

120

140

25 50 75 100 125 150 175

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Starting T , Junction Temperature (°C)

I

TOP 4.2A

7.2A

BOTTOM 10A

V = 25V

D

DD

P1-P3 P4-P6 P7-P9

IRFZ24NPBF

Mfr. #:

Manufacturer:

Infineon Technologies

Description:

MOSFET MOSFT 55V 17A 70mOhm 13.3nC

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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