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2SK3811-ZP-E1-AY

P1-P3P4-P6P7-P9P10-P10
Data Sheet D16737EJ1V0DS
2
2SK3811
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 10
µ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.0 3.0 4.0 V
Forward Transfer Admittance
Note
| y
fs | VDS = 10 V, ID = 55 A 45 89 S
Drain to Source On-state Resistance
Note
RDS(on) VGS = 10 V, ID = 55 A 1.4 1.8 mΩ
Input Capacitance Ciss VDS = 10 V 17700 pF
Output Capacitance Coss VGS = 0 V 2200 pF
Reverse Transfer Capacitance Crss f = 1 MHz 1300 pF
Turn-on Delay Time td(on) VDD = 20 V, ID = 55 A 54 ns
Rise Time tr VGS = 10 V 140 ns
Turn-off Delay Time td(off) RG = 0 Ω 130 ns
Fall Time tf 21 ns
Total Gate Charge QG VDD = 32 V 260 nC
Gate to Source Charge QGS VGS = 10 V 57 nC
Gate to Drain Charge QGD ID = 110 A 83 nC
Body Diode Forward Voltage
Note
V
F(S-D) IF = 110 A, VGS = 0 V 0.87 1.5 V
Reverse Recovery Time trr IF = 110 A, VGS = 0 V 60 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
µ
s 80 nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20 → 0 V
PG.
R
G
= 25 Ω
50 Ω
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50 Ω
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ = 1 s
Duty Cycle ≤ 1%
τ
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10% 10%
µ
Data Sheet D16737EJ1V0DS
3
2SK3811
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
PT - Total Power Dissipation - W
0
50
100
150
200
250
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
0.1
1
10
100
1000
0.1 1 10 100
PW = 100 µs
1 ms
10 ms
I
D(pulse)
I
D(DC)
Power Dissipation Limited
R
DS(on)
Limited
(at V
GS
= 10 V)
T
C
= 25°C
Single pulse
V
DS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
0.001
0.01
0.1
1
10
100
1000
R
th(ch-A)
= 83.3°C/W
R
th(ch-C)
= 0.587°C/W
Single pulse
PW - Pulse Width - s
100
µ
1 m 10 m 100 m 1 10 100 1000
Data Sheet D16737EJ1V0DS
4
2SK3811
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
0
100
200
300
400
500
0 0.2 0.4 0.6 0.8 1
V
GS
= 10 V
Pulsed
V
DS - Drain to Source Voltage - V
ID - Drain Current - A
0.001
0.01
0.1
1
10
100
1000
123456
V
DS
= 10 V
Pulsed
T
A
= 150°C
75°C
25°C
−55°C
V
GS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
VGS(off) - Gate Cut-off Voltage - V
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-75 -25 25 75 125 175
V
DS
= 10 V
I
D
= 1 mA
Tch - Channel Temperature - °C
| yfs | - Forward Transfer Admittance - S
1
10
100
1000
1 10 100 1000
V
DS
= 10 V
Pulsed
T
A
= 150°C
75°C
25°C
−55°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m
Ω
0
0.4
0.8
1.2
1.6
2.0
2.4
1 10 100 1000
V
GS
= 10 V
Pulsed
I
D - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
0
1
2
3
4
5
6
02468101214161820
Pulsed
I
D
= 110 A
55 A
22 A
V
GS - Gate to Source Voltage - V
P1-P3P4-P6P7-P9P10-P10

2SK3811-ZP-E1-AY

Mfr. #:
Buy 2SK3811-ZP-E1-AY
Manufacturer:
Renesas Electronics
Description:
MOSFET MOSFET
Lifecycle:
New from this manufacturer.
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