Data Sheet D16737EJ1V0DS
5
2SK3811
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m
0
0.5
1.0
1.5
2.0
2.5
3.0
-75 -25 25 75 125 175
V
GS
= 10 V
Pulsed
T
ch - Channel Temperature - °C
Ciss, Coss, Crss - Capacitance - pF
100
1000
10000
100000
0.1 1 10 100
V
GS
= 0 V
f = 1 MHz
C
iss
C
rss
C
oss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
1
10
100
1000
0.1 1 10 100 1000
V
DD
= 20 V
V
GS
= 10 V
R
G
= 0 Ω
t
d(off)
t
d(on)
t
t
I
D - Drain Current - A
VDS - Drain to Source Voltage - V
0
5
10
15
20
25
30
35
0 50 100 150 200 250 300
0
2
4
6
8
10
12
14
I
D
= 110 A
V
DS
V
GS
V
DD
= 32 V
20 V
8 V
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
IF - Diode Forward Current - A
0.1
1
10
100
1000
0 0.5 1 1.5
0 V
Pulsed
V
GS
= 10 V
V
F(S-D) - Source to Drain Voltage - V
trr - Reverse Recovery Time - ns
1
10
100
1000
0.1 1 10 100 1000
di/dt = 100 A/µs
V
GS
= 0 V
I
F - Diode Forward Current - A
