Philips Semiconductors Preliminary specification
Silicon Diffused Power Transistor PHE13009
GENERAL DESCRIPTION
The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,
etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 700 V
V
CBO
Collector-Base voltage (open emitter) - 700 V
V
CEO
Collector-emitter voltage (open base) - 400 V
I
C
Collector current (DC) - 12 A
I
CM
Collector current peak value - 24 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 80 W
V
CEsat
Collector-emitter saturation voltage I
C
= 5.0 A;I
B
= 1.0 A 0.32 1.0 V
h
FEsat
I
C
= 5.0 A; V
CE
= 5 V - 40
t
f
Fall time I
C
= 5.0 A; I
B1
= 1.0 A 0.1 0.5 µs
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector to emitter voltage V
BE
= 0 V - 700 V
V
CEO
Collector to emitter voltage (open base) - 400 V
V
CBO
Collector to base voltage (open emitter) - 700 V
I
C
Collector current (DC) - 12 A
I
CM
Collector current peak value - 24 A
I
B
Base current (DC) - 6 A
I
BM
Base current peak value - 12 A
P
tot
Total power dissipation T
mb
≤ 25 ˚C - 80 W
T
stg
Storage temperature -65 150 ˚C
T
j
Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
Junction to mounting base - 1.56 K/W
R
th j-a
Junction to ambient in free air 60 - K/W
123
tab
b
c
e
March 1999 1 Rev 1.000
