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IS62WV6416BLL-55TLI

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
01/14/08
IS62WV6416ALL, IS62WV6416BLL
CAPACITANCE
(1)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 8 pF
COUT Input/Output Capacitance VOUT = 0V 10 pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions VDD Min. Max. Unit
V
OH Output HIGH Voltage IOH = -0.1 mA 1.7-2.2V 1.4 — V
IOH = -1 mA 2.5-3.6V 2.2 — V
VOL Output LOW Voltage IOL = 0.1 mA 1.7-2.2V — 0.2 V
IOL = 2.1 mA 2.5-3.6V — 0.4 V
VIH Input HIGH Voltage 1.7-2.2V 1.4 VDD + 0.2 V
2.5-3.6V 2.2 VDD + 0.3 V
VIL
(1)
Input LOW Voltage 1.7-2.2V –0.2 0.4 V
2.5-3.6V –0.2 0.6 V
ILI Input Leakage GND ≤ VIN ≤ VDD –1 1 µA
ILO Output Leakage GND ≤ VOUT ≤ VDD, Outputs Disabled –1 1 µA
Notes:
1. VIL (min.) = –1.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com
5
Rev. C
01/14/08
IS62WV6416ALL, IS62WV6416BLL
AC TEST CONDITIONS
Parameter 62WV6416ALL 62WV6416BLL
(Unit) (Unit)
Input Pulse Level 0.4V to VDD-0.2V 0.4V to VDD-0.3V
Input Rise and Fall Times 5 ns 5ns
Input and Output Timing VREF VREF
and Reference Level
Output Load See Figures 1 and 2 See Figures 1 and 2
AC TEST LOADS
Figure 1
Figure 2
1.7-2.2V 2.5V - 3.6V
R1(
Ω)Ω)
Ω)Ω)
Ω) 3070 3070
R2(
Ω)Ω)
Ω)Ω)
Ω) 3150 3150
VREF 0.9V 1.5V
VTM 1.8V 2.8V
R1
5 pF
Including
jig and
scope
R2
OUTPUT
VTM
R1
30 pF
Including
jig and
scope
R2
OUTPUT
VTM
6
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
01/14/08
IS62WV6416ALL, IS62WV6416BLL
IS62WV6416ALL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter Test Conditions Max. Unit
55
ICC VDD Dynamic Operating VDD = Max., Com. 10 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. 10
typ.
(1)
6
ICC1 Operating Supply VDD = Max., Com. 5 mA
Current IOUT = 0 mA, f = 0 Ind. 5
ISB1 TTL Standby Current VDD = Max., Com. 1.2 mA
(TTL Inputs) VIN = VIH or VIL Ind. 1.2
CS1 = VIH, CS2 = VIL,
f = 1 MHZ
OR
ULB Control
VDD = Max., VIN = VIH or VIL
CS1 = VIL, f = 0, UB = VIH, LB = VIH
ISB2 CMOS Standby VDD = Max., Com. 10 µA
Current (CMOS Inputs) CS1
≥
V DD – 0.2V, Ind. 10
CS2
≤ 0.2V,
typ.
(1)
4
VIN
≥
V DD – 0.2V, or
VIN
≤
0.2V, f = 0
OR
ULB Control VDD = Max., CS1 = VIL, CS2=VIH
VIN ≤ 0.2V, f = 0; UB / LB = VDD – 0.2V
Note:
1. Typical values are measured at V
DD=1.8V, TA=25
o
C. Not 100% tested.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

IS62WV6416BLL-55TLI

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Manufacturer:
ISSI
Description:
SRAM 1Mb 64Kx16 55ns Async SRAM
Lifecycle:
New from this manufacturer.
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