TCET4100G

Document Number: 83727 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.5, 07-Oct-10 1
Optocoupler, Phototransistor Output, (Dual, Quad Channel)
TCET2100, TCET4100
Vishay Semiconductors
DESCRIPTION
The TCET2100/TCET4100 consists of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode, available in 8 pin (dual channel) and 16 pin (quad
channel) package.
FEATURES
Extra low coupling capacity - typical 0.2 pF
High common mode rejection
Low temperature coefficient of CTR
Rated impulse voltage (transient overvoltage)
V
IOTM
= 10 kV peak
Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index: CTI 175
Thickness through insulation 0.4 mm
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
AGENCY APPROVALS
UL1577, file no. E52744 system code H, double protection
CSA 22.2 bulletin 5A, double protection
DIN EN 60747-5-5 (VDE 0884)
•FIMKO
C
E
1
A
C
8 Pin
16 Pin
17198-1
V
DE
C
i179012-1
Dual Channel
Quad Channel
ORDERING INFORMATION
TCET#100
PART NUMBER
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, cUL, VDE 50 to 600
DIP-8, dual channel TCET2100
DIP-16, quad channel TCET4100
7.62 mm
DIP
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83727
2 Rev. 1.5, 07-Oct-10
TCET2100, TCET4100
Vishay Semiconductors
Optocoupler, Phototransistor Output,
(Dual, Quad Channel)
Notes
(1)
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering conditions for through hole devices.
Note
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(1)
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Forward current I
F
60 mA
Forward surge current t
p
10 μs I
FSM
1.5 A
Power dissipation P
diss
100 mW
Junction temperature T
j
125 °C
OUTPUT
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
10 ms I
CM
100 mA
Power dissipation P
diss
150 mW
Junction temperature T
j
125 °C
COUPLER
Isolation test voltage (RMS) t = 1 s V
ISO
5300 V
RMS
Isolation voltage V
IORM
890 V
P
Total power dissipation P
tot
250 mW
Operating ambient temperature range T
amb
- 55 to + 100 °C
Storage temperature range T
stg
- 55 to + 150 °C
Soldering temperature
(2)
2 mm from case, t 10 s T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= ± 50 mA V
F
1.25 1.6 V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
50 pF
OUTPUT
Collector emitter voltage I
C
= 1 mA V
CEO
70 V
Emitter collector voltage I
E
= 100 μA V
ECO
7V
Collector emitter cut-off current V
CE
= 20 V, I
F
= 0, E = 0 I
CEO
10 100 nA
COUPLER
Collector emitter saturation voltage I
F
= 10 mA, I
C
= 1 mA V
CEsat
0.3 V
Cut-off frequency
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100 Ω
f
c
110 kHz
Coupling capacitance f = 1 MHz C
k
0.3 pF
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
V
CE
= 5 V, I
F
= 5 mA CTR 50 600 %
Document Number: 83727 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.5, 07-Oct-10 3
TCET2100, TCET4100
Optocoupler, Phototransistor Output,
(Dual, Quad Channel)
Vishay Semiconductors
Note
According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC60747
MAXIMUM SAFETY RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward current I
F
275 mA
OUTPUT
Power dissipation P
diss
400 mW
COUPLER
Rated impulse voltage V
IOTM
10 kV
Safety temperature T
si
175 °C
INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test
100 %, t
test
= 1 s V
pd
1.669 kV
Partial discharge test voltage -
lot test (sample test)
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IOTM
10 kV
V
pd
1.424 kV
Insulation resistance
V
IO
= 500 V R
IO
10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Ω
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
R
IO
10
9
Ω
0 25 50 75 125
0
50
100
150
200
300
P
tot
- Total Power Dissipation (mW)
T
si
- Safety Temperature (°C)
150
94 9182
100
250
Phototransistor
P
si
(mW)
IR-diode
I
si
(mA)
t
13930
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2

TCET4100G

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Quad CTR > 50-600%
Lifecycle:
New from this manufacturer.
Delivery:
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