Document Number: 83727 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.5, 07-Oct-10 5
TCET2100, TCET4100
Optocoupler, Phototransistor Output,
(Dual, Quad Channel)
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature
Fig. 9 - Collector Dark Current vs. Ambient Temperature
Fig. 10 - Collector Current vs. Forward Current
Fig. 11 - Collector Current vs. Collector Emitter Voltage
0
50
100
150
200
250
300
0 40 80 120
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
96 11700
Coupled device
Phototransistor
IR-diode
0.1
1
10
100
1000
0
V
F
- Forward Voltage (V)
96 11862
I
F
- Forward Current (mA)
1.6
1.2
0.8
0.4
2.0
- 25 0 25 50
0
0.5
1.0
1.5
2.0
CTR
rel
- Relative Current Transfer Ratio
95 11025
75
T
amb
- Ambient Temperature (°C)
V
CE
= 5 V
I
F
= 5 mA
0255075
1
10
100
1000
10 000
I
CEO
- Collector Dark Current,
100
95 11026
with Open Base (nA)
V
CE
= 20 V
I
F
= 0
T
amb
- Ambient Temperature (°C)
0.1 1 10
0.01
0.1
1
100
I
C
- Collector Current (mA)
I
F
- Forward Current (mA)
100
95 11027
10
V
CE
= 5 V
0.1 1 10
0.1
1
10
100
V
CE
- Collector Emitter Voltage (V)
100
95 10985
I
C
- Collector Current (mA)
I
F
= 50 mA
5 mA
2 mA
1 mA
20 mA
10 mA