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IRF644NS

P1-P3P4-P6P7-P8
Document Number: 91038 www.vishay.com
S-83000-Rev. A, 19-Jan-09 1
Power MOSFET
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D
2
PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on
resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application.
Note
a. See device orientation.
PRODUCT SUMMARY
V
DS
(V) 250 V
R
DS(on)
(Ω)V
GS
= 10 V 0.240
Q
g
(Max.) (nC) 54
Q
gs
(nC) 9.2
Q
gd
(nC) 26
Configuration Single
N-Channel MOSFET
G
D
S
D
2
PAK (TO-263)
G
D
S
TO-220
G
D
S
I
2
PAK (TO-262)
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220 D
2
PAK (TO-263) D
2
PAK (TO-263) D
2
PAK (TO-263) I
2
PAK (TO-262)
Lead (Pb)-free
IRF644NPbF IRF644NSPbF IRF644NSTRLPbF
a
IRF644NSTRRPbF
a
IRF644NLPbF
SiHF644N-E3 SiHF644NS-E3 SiHF644NSTL-E3
a
SiHF644NSTR-E3
a
SiHF644NL-E3
SnPb
IRF644N IRF644NS IRF644NSTRL
a
IRF644NSTRR
a
IRF644NL
SiHF644N SiHF644NS SiHF644NSTL
a
SiHF644NSTR
a
SiHF644NL
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91038
2 S-83000-Rev. A, 19-Jan-09
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 5.0 µH, R
G
= 25 Ω, I
AS
= 8.4 A (see fig. 12).
c. I
SD
≤ 8.4 A, dI/dt ≤ 378 A/µs, V
DD
≤ V
DS
, T
J
≤ 175 °C.
d. 1.6 mm from case.
e. This is a calculated value limited to T
J
= 175 °C.
ABSOLUTE MAXIMUM RATINGS T
C
= 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
250
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
V
GS
at 10 V
T
C
= 25 °C
I
D
14
A
T
C
= 100 °C 9.9
Pulsed Drain Current
a
I
DM
56
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
b
E
AS
180
e
mJ
Avalanche Current I
AR
8.4 A
Repetitive Avalanche Energy E
AR
15 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
150 W
Peak Diode Recovery dV/dt
c
dV/dt 7.9 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
c
R
thJA
-62
°C/W
Case-to-Sink, Flat, Greased Surface
c
R
thCS
0.50 -
Maximum Junction-to-Case (Drain) R
thJC
-1.0
Maximum Junction-to-Ambient (PCB Mount)
d
R
thJA
-40
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA 250 - -
V
V
DS
Temperature Coefficient ΔV
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.33 -
V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 2.0 - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 250 V, V
GS
= 0 V - - 25
µA
V
DS
= 200 V, V
GS
= 0 V, T
J
= 150 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 8.4 A
b
- - 0.240
Ω
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 8.4 A
b
8.8 - -
S
Document Number: 91038 www.vishay.com
S-83000-Rev. A, 19-Jan-09 3
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. This is only applied to TO-220 package.
d. When mounted on 1" square PCB (fr-4 or G-10 material).
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 1060 -
pFOutput Capacitance C
oss
- 140 -
Reverse Transfer Capacitance C
rss
-38-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 8.4 A, V
DS
= 200 V,
see fig. 6 and 13
b
--54
nC Gate-Source Charge Q
gs
--9.2
Gate-Drain Charge Q
gd
--26
Turn-On Delay Time t
d(on)
V
DD
= 125 V, I
D
= 8.4 A,
R
G
= 6.2 Ω, V
GS
= 10 V, see fig. 10
b
-10-
ns
Rise Time t
r
-21-
Turn-Off Delay Time t
d(off)
-30-
Fall Time t
f
-17-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--14
A
Pulsed Diode Forward Current
a
I
SM
--56
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 14 A, V
GS
= 0 V
b
--1.3V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 14 A, dI/dt = 100 A/µs
b
- 165 250 ns
Body Diode Reverse Recovery Charge Q
rr
-1.01.6µC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
D
S
G
S
D
G
91038_01
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 25 °C
4.5 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
10 10
2
10
2
10
0.1
1
0.1
1
10
2
10
10 10
2
V
DS
,
Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 175 °C
91038_02
4.5 V
1
0.1
0.1
1
P1-P3P4-P6P7-P8

IRF644NS

Mfr. #:
Buy IRF644NS
Manufacturer:
Vishay
Description:
MOSFET N-CH 250V 14A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
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