IRF644NS

Document Number: 91038 www.vishay.com
S-83000-Rev. A, 19-Jan-09 7
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91038
.
Q
GS
Q
GD
Q
G
V
G
Charge
V
GS
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS
= 10 V*
V
DD
I
SD
Driver gate drive
D.U.T. I
SD
waveform
D.U.T. V
DS
waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
* V
GS
= 5 V for logic level devices and 3 V drive devices
Peak Diode Recovery dV/dt Test Circuit
V
DD
dV/dt controlled by R
G
I
SD
controlled by duty factor "D"
D.U.T. - device under test
D.U.T
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
R
G
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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IRF644NS

Mfr. #:
Manufacturer:
Vishay
Description:
MOSFET N-CH 250V 14A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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