I
NTEGRATED
C
IRCUITS
D
IVISION
DS-IX2127-R03 www.ixysic.com 1
Driver Characteristics
Features
• Floating Channel Designed for Bootstrap Operation
up to 600V
• Tolerant to Negative Transient Voltages; dV/dt
Immune
• Undervoltage Lockout
• 3.3V, 5V, and 12V Input Logic Compatible
• Open-Drain FAULT
Indicator Pin Shows
Over-Current Shutdown
• Output in Phase with the Input
Applications
• High-Speed Gate Driver
• Motor Drive Inverter
Description
The IX2127 is a high-voltage, high-speed power
MOSFET and IGBT driver. High-voltage level-shift
circuitry enables this device to operate up to 600V.
IXYS Integrated Circuits Division’s proprietary
common-mode design techniques provide stable
operation in high dV/dt noise environments.
An on-board comparator can be used to detect an
over-current condition in the driven MOSFET or IGBT
device, and then shut down drive to that device. An
open-drain output, FAULT
, indicates that an
over-current shutdown has occurred.
The gate driver output typically can source 250mA
and sink 500mA, which is suitable for fluorescent lamp
ballast, motor control, SMPS, and other converter
drive topologies.
The IX2127 is provided in 8-pin DIP and 8-pin SOIC
packages, and is available in Tape & Reel versions.
See ordering information below.
Ordering Information
IX2127 Block Diagram
Parameter Rating Units
V
OFFSET
600 V
I
O +/-
(Source/Sink)
250/500 mA
V
CSth
250 mV
t
ON
/ t
OFF
(Typical)
100 ns
Part Description
IX2127G 8-Pin DIP (50/Tube)
IX2127N 8-Pin SOIC (100/Tube)
IX2127NTR 8-Pin SOIC (2000/Reel)
V
CC
IN
FAULT
COM
V
B
HO
V
S
CS
Buffer
Comparator
Delay
Undervoltage Lockout
Data LatchTransmitter
High-Low
Level Shift
Low-High
Level Shift
ReceiverTransmitterData Latch
Receiver
Low Side High Side
QR
S
Enable
Enable
Blanking
Signal
+
_
V
CC
IX2127
High-Voltage
Power MOSFET & IGBT Driver