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NTB90N02T4

P1-P3P4-P6P7-P8
Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 2
1 Publication Order Number:
NTB90N02/D
NTB90N02, NTP90N02
Power MOSFET
90 Amps, 24 Volts
N−Channel D
2
PAK and TO−220
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Pb−Free Packages are Available
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
24 Vdc
Gate−to−Source Voltage
− Continuous
V
GS
20
Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Single Pulse (t
p
= 10 s)
I
D
I
DM
90*
200
A
A
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
85
0.66
W
W/°C
Operating and Storage Temperature T
J
, T
stg
−55 to +150 °C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 28 Vdc, V
GS
= 10 Vdc,
L = 5.0 mH, I
L(pk)
= 17 A, RG = 25 )
E
AS
733 mJ
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
R
JC
R
JA
1.55
70
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
*Chip current capability limited by package.
NTx90N02
AYWW
NTx90N02
AYWW
TO−220AB
CASE 221A
STYLE 5
1
2
3
4
NTx90N02 = Device Code
x = P or B
A = Assembly Location
Y = Year
WW = Work Week
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Sourc
e
4
Drain
2
Drain
1
2
3
4
D
2
PAK
CASE 418B
STYLE 2
http://onsemi.com
24 V
7.5 m @ 4.5 V
5.0 m @ 10 V
R
DS(on)
TYP
90 A
I
D
MAXV
(BR)DSS
N−Channel
D
S
G
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAMS
NTB90N02, NTP90N02
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
24
−
27
25
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 24 Vdc, V
GS
= 0 Vdc)
(V
DS
= 24 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
1.0
10
Adc
Gate−Body Leakage Current (V
GS
= 20 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.9
−3.8
3.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 90 Adc)
(V
GS
= 4.5 Vdc, I
D
= 40 Adc)
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 4.5 Vdc, I
D
= 20 Adc)
R
DS(on)
−
−
−
−
5.0
7.5
5.0
7.5
5.8
9.0
5.8
9.0
m
Forward Transconductance (Note 3) (V
DS
= 15 Vdc, I
D
= 10 Adc) g
FS
− 25 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 20 Vdc, V
GS
= 0 Vdc,
f 1 0 MHz)
C
iss
− 2120 −
pF
Output Capacitance
f = 1.0 MHz)
C
oss
− 900 −
Transfer Capacitance C
rss
− 360 −
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(V
DD
= 20 Vdc, I
D
= 20 Adc,
V 4 5 Vdc R 25)
t
d(on)
− 16 −
ns
Rise Time
V
GS
= 4.5 Vdc, R
G
= 2.5 )
t
r
− 90 −
Turn−Off Delay Time t
d(off)
− 28 −
Fall Time t
f
− 60 −
Gate Charge (V
DS
= 20 Vdc, I
D
= 20 Adc,
V 4 5 Vdc) (Note 3)
Q
T
− 29 −
nC
V
GS
= 4.5 Vdc) (Note 3)
Q
1
− 8.0 −
Q
2
− 20 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (I
S
= 2.3 Adc, V
GS
= 0 Vdc)
(I
S
= 40 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 2.3 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
−
−
−
0.75
1.2
0.65
1.0
−
−
Vdc
Reverse Recovery Time (I
S
= 2.3 Adc, V
GS
= 0 Vdc,
dI /dt 100 A/s) (Note 3)
t
rr
− 40 −
ns
dI
S
/dt = 100 A/s) (Note 3)
t
a
− 21 −
t
b
− 18 −
Reverse Recovery Stored Charge Q
RR
− 0.036 − C
3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTB90N02, NTP90N02
http://onsemi.com
3
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
8 V
5.2 V
0.015
0.001
0.0075
0.0025
0
10
1
100
1000
0.005
0
30
21.51
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.07
0.05
0.02
0.01
4
0
26810
Figure 3. On−Resistance versus
Gate−To−Source Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE ()
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
50
−50 100750−25 125 150
23 6
55
0
0.01
0.015
41612820
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10
20
40
2.5 3
V
GS
= 0 V
T
J
= 125°C
T
J
= 100°C
I
D
= 10 A
V
DS
= 10 V
V
GS
= 4.5 V
V
GS
= 10 V
T
J
= 25°C
I
D
= 10 A
T
J
= 25°C
V
DS
≥ 24 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE ()
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
T
J
= 25°C
5025
45
0.5 43.5
V
GS
= 3.0 V
4.2 V
3.2 V
3.4 V
3.6 V
3.8 V
4 V
4.4 V
4.6 V
5 V
0.04
0.03
0.06
60 65 70 75 80
60
90
80
100
70
4.8 V
6 V
6.5 V
9 V
0
0.0125
0.005
I
D
= 90 A
V
DS
= 4.5 V
0.1
0.01
T
J
= 25°C
85 90
P1-P3P4-P6P7-P8

NTB90N02T4

Mfr. #:
Buy NTB90N02T4
Manufacturer:
ON Semiconductor
Description:
MOSFET 28V 90A N-Channel
Lifecycle:
New from this manufacturer.
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