© Semiconductor Components Industries, LLC, 2017
July, 2018 − Rev. 2
1 Publication Order Number:
FOD819/D
FOD819 Series
FOD819 4-Pin DIP High
Speed Phototransistor
Optocouplers
Description
The FOD819 consists of a gallium arsenide (GaAs) infra− red
emitting diode, driving a high speed photo detector with integrated
base−to−emitter resistor, R
BE
, in a 4−pin dual−in−line package. It is
designed to be an improved replacement to the popular FOD817
Series when higher speed performance is required in isolated data
signal transmission.
Features
High Speed Performance ~ 30 kHz
Current Transfer Ratio: 100% to 600%
Minimum BV
CEO
of 80 V Guaranteed
Safety and Regulatory Approvals:
UL1577, 5,000 VAC
RMS
for 1 Minute
DIN EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
Typical Applications
Digital Logic Inputs
Microprocessor Inputs
Power Supply Monitor
Twisted Pair Line Receiver
Telephone Line Receiver
www.onsemi.com
See detailed ordering and shipping information on page 7 o
f
this data sheet.
ORDERING INFORMATION
DIP 4 PINS
MARKING DIAGRAM
ON = Company Logo
819 = Device Number
V = DIN EN/IEC60747−5−5 Option
X = One−Digit Year Code
ZZ = Digit Work Week
Y = Assembly Package Code
PIN CONNECTIONS
1.
2.
3.
4
5.
6.
ON
FOD819 Series
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2
Safety and Insulation Ratings
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Table 1. SAFETY AND INSULATION RATINGS
Parameter
Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
< 150 V
RMS
I–IV
< 300 V
RMS
I–III
Climatic Classification 55/115/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Table 2.
Symbol
Parameter Value Unit
VPR
Input−to−Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC
1360
Vpeak
Input−to−Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC
1594
Vpeak
VIORM
Maximum Working Insulation Voltage 850
Vpeak
VIOTM
Highest Allowable Over−Voltage 8000
Vpeak
External Creepage
7
mm
External Clearance
7
mm
External Clearance (for Option W, 0.4” Lead Spacing)
10
mm
DTI Distance Through Insulation (Insulation Thickness)
0.4
mm
T
S
Case Temperature (Note 1)
175 °C
IS,INPUT
Input Current (Note 1)
400 mA
PS,OUTPUT
Output Power (Note 1)
700 mW
RIO
Insulation Resistance at T
S
, V
IO
= 500 V (Note 1) > 10
11
Ω
1. Safety limit values – maximum values allowed in the event of a failure.
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter Value Unit
TOTAL PACKAGE
T
STG
Storage Temperature −55 to +125 °C
T
OPR
Operating Temperature −55 to +110 °C
T
J
Junction Temperature −55 to +125 °C
T
SOL
Lead Solder Temperature 260 for 10 seconds °C
θ
JC
Junction−to−Case Thermal Resistance 210 °C/W
P
TOT
Total Device Power Dissipation 200 mW
EMITTER
I
F
Continuous Forward Current 50 mA
V
R
Reverse Voltage 6 V
P
D
Power Dissipation 70 mW
Derate Above 100°C 1.7 mW/°C
FOD819 Series
www.onsemi.com
3
Table 3. ABSOLUTE MAXIMUM RATINGS (continued)
Symbol UnitValueParameter
DETECTOR
V
CEO
Collector−Emitter Voltage 80 V
V
ECO
Emitter−Collector Voltage 2 V
I
C
Continuous Collector Current 30 mA
P
C
Collector Power Dissipation 150 mW
Derate Above 90°C 2.9 mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Electrical Characteristics
Table 4. INDIVIDUAL COMPONENT CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Symbol
Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Forward Voltage I
F
= 1.5 mA 1.2 1.4 V
I
R
Reverse Current V
R
= 4.0 V 10 μA
C
t
Terminal Capacitance V = 0, f = 1 kHz 30 pF
DETECTOR
I
CEO
Collector Dark Current V
CE
= 40 V, I
F
= 0 100 nA
BV
CEO
Collector−Emitter Breakdown Voltage I
C
= 0.1 mA, I
F
= 0
80
150 V
BV
ECO
Emitter−Collector Breakdown Voltage I
E
= 0.1 mA, I
F
= 0 2 7 V
DC TRANSFER CHARACTERISTICS
CTR
Current Transfer Ratio (Note 2)
I
F
= 1.5 mA, V
CE
= 5 V 100 600 %
V
CE(SAT)
Saturation Voltage I
F
= 1.5 mA, I
C
= 0.2 mA
0.3
V
I
C(OFF)
OFF−state collector current V
F
= 0.7 V, V
CE
= 40 V 10 μA
AC TRANSFER CHARACTERISTICS
t
R
Rise Time (Saturated)
I
F
= 1.5 mA, V
CC
= 5 V, R
L
= 10 kΩ
(
Note 3)
12 μs
t
F
Fall Time (Saturated) 20 μs
t
PHL
Propagation Delay Time High−to−Low
I
F
= 1.5 mA, V
CC
= 5 V, R
L
= 10 kΩ
(
Note 3)
9 30 μs
t
PLH
Propagation Delay Time Low−to−High 18 30 μs
2. Current Transfer Ratio (CTR) = I
C
/ I
F
x 100%.
3. Refer to test circuit setup.
Table 5. ISOLATION CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Symbol
Parameter Test Conditions Min. Typ. Max. Unit
V
ISO
Input−Output Isolation Voltage (Note 4) f = 60 Hz, t = 1 minutes,
I
I−O
2 μA
5000
VAC
RMS
R
ISO
Isolation Resistance V
I−O
= 500 V
DC
1 x 10
11
Ω
C
ISO
Isolation Capacitance V
I−O
= 0, f = 1 MHz 0.6 1.0 pf
4. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.

FOD819S

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Transistor Output Optocouplers 4PB TR SMD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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