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BUK221-50DY,118

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFET™
Product data Rev. 01 — 16 April 2003 4 of 16
9397 750 11167
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4. Functional description
A diagnostic status ensures faster fault detection.
Active current limit is combined with latched short circuit protection in order to
protect the device in the event of a short circuit.
Thermal shutdown for high temperature conditions has an automatic restart at a
lower temperature so providing protection against excessive power dissipation.
Active clamping protects the device against low energy spikes.
Undervoltage lockout means the device shuts down for low battery voltages, thus
avoiding faulty operation.
Overvoltage shutdown in the on-state protects a load such as a lamp filament from
potentially destructive voltage spikes.
[1] The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold temperature.
See “Overtemperature protection” characteristics in Table 6 “Static characteristics”.
Table 3: Truth table
Abbreviations: L = logic LOW; H = logic HIGH; X = don’t care; 0 = condition not present; 1 = condition present;
UV = undervoltage; OV = overvoltage; OC = open circuit load; SC = short circuit; OT = overtemperature
[1]
.
Input Supply Load 1 Load 2 Load output Status Operating mode
1 2 UV OV OC SC OT OC SC OT 1 2
L L 0 X 0 X X 0 X X OFF OFF H both off & normal
LL0X1XXXXXOFFOFF Lboth off, one/both OC or
shorted to V
S
or battery;
Figure 10
L H 0 X 1 X X 0 0 0 OFF ON L one off & OC, with other on
& normal
HL00000000ONOFFHone on & normal, with other
off & normal
HH00000000ONON Hboth on & normal
H X 1 0 X X X 0 X X OFF OFF H supply undervoltage lockout
H X 0 1 X 0 0 X 0 0 OFF OFF H supply overvoltage
shutdown
HX0001XXXXOFF X Lone SC tripped
HL0001X00XOFFOFFLone SC tripped, with other
off & normal
HH0001X000OFFON Lone SC tripped, with other
on & normal
HX00001XXXOFFX Lone OT shutdown
HL0000100XOFFOFF LoneOTshutdown, with other
off & normal
HH00001000OFFON LoneOTshutdown, with other
on & normal
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFET™
Product data Rev. 01 — 16 April 2003 5 of 16
9397 750 11167
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5. Limiting values
[1] The device will not be harmed by exposure to the maximum supply voltage, but normal operation is not possible because of overvoltage
shutdown - see Table 6 “Static characteristics” for the operating range.
[2] Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load
must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. See Figure 10 “Typical
dynamic response circuit diagram including reverse supply protection and open load detection.”
6. Thermal characteristics
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
BG
battery-ground supply voltage
[1]
-45V
I
L
load current T
mb
≤ 130 °C-4A
P
tot
total power dissipation T
mb
≤ 25 °C - 44.6 W
T
stg
storage temperature −55 +175 °C
T
j
junction temperature −40 +150 °C
T
mb
mounting base temperature during soldering (≤ 10 s) - 260 °C
Reverse battery voltage
V
BGR
reverse battery-ground supply voltage R
I
≥ 3.3 kΩ; R
SS
≥ 3.3 kΩ; Figure 10
[2]
-16V
V
BGRR
repetitive reverse battery-ground
supply voltage
-32V
Input current
I
I
input current −5+5mA
I
IRM
repetitive peak input current δ≤0.1; t
p
= 300 µs −50 +50 mA
Status current
I
S
status current −5+5mA
I
SRM
repetitive peak status current δ≤0.1; t
p
= 300 µs −50 +50 mA
Inductive load clamping
E
BL(CL)S
non-repetitive battery-load clamping
energy
T
j
= 150 °C prior to turn-off; V
BG
=13V;
I
L
= 5 A; (one channel) Figure 13
-60mJ
Electrostatic discharge voltage
V
esd
electrostatic discharge voltage Human Body Model 1; C = 100 pF;
R = 1.5 kΩ
-2kV
Table 5: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to
mounting base
per channel - 4 5.6 K/W
both channels - 2 2.8 K/W
R
th(j-a)
thermal resistance from junction to
ambient
mounted on printed circuit board;
minimum footprint
- 50 - K/W
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFET™
Product data Rev. 01 — 16 April 2003 6 of 16
9397 750 11167
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
7. Static characteristics
Table 6: Static characteristics
Limits are valid for
−
40
°
C
≤
T
mb
≤
+150
°
C and typical values for T
mb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Clamping voltage
V
BG(CL)
battery-ground clamping voltage I
G
=1mA 455565V
V
BL(CL)
battery-load clamping voltage I
L
=I
G
= 1 mA 50 55 65 V
V
LG(CL)
load-ground clamping voltage I
L
=10mA;Figure 13
[1]
−18 −23 −28 V
I
L
= 4 A; t
p
= 300 µs −20 −25 −30 V
Supply voltage
V
BG(oper)
battery-ground operating voltage 5.5 - 35 V
Current
[2]
I
B
battery quiescent current V
LG
=V
IG
=0V;Figure 9
[3]
T
mb
= 150 °C --20µA
T
mb
=25°C - 0.1 1 µA
I
L(off)
off-state load current V
BL
=V
BG
; per channel
T
mb
= 150 °C --10µA
T
mb
=25°C - 0.1 1 µA
I
G(on)
operating current one channel on; Figure 5 - 23mA
both channels on - 4 6 mA
I
L(nom)
nominal load current (ISO) V
BL
= 0.5 V; T
mb
=85°C
[4]
3.6 - - A
Resistance
R
BLon
battery-load on-state resistance 9 ≤ V
BG
≤ 35 V; I
L
=4A;Figure 4
[5]
T
mb
=25°C - 73 90 mΩ
T
mb
= 150 °C - 146 180 mΩ
V
BG
= 5.5 V; I
L
=4A
T
mb
=25°C - 76 120 mΩ
T
mb
= 150 °C - 150 240 mΩ
R
G
ground resistor I
G
= −200 mA; t
p
= 300 µs
[6]
40 75 100 Ω
Input
[7]
I
I
input current V
IG
= 5 V 20 60 160 µA
V
IG(CL)
input-ground clamping voltage I
I
= 200 µA 5.5 7 8.5 V
V
IG(on)
input-ground turn-on voltage Figure 8 - 2.1 3 V
V
IG(off)
input-ground turn-off voltage 1.2 1.8 - V
V
IG(on)(hys)
input-ground turn-on hysteresis 0.15 0.3 0.5 V
I
I(on)
input turn-on current V
IG
=3V - - 100 µA
I
I(off)
input turn-off current V
IG
= 1.2 V 12 - - µA
Open current detection
[8][9]
V
LG(oc)
load-ground open circuit voltage V
BG
≥ 9 V 1.5 2.5 3.5 V
I
G(oc)
open-circuit operating current V
BG
=V
LG
=16V
open load detected; other
channel is off
- 0.8 1.5 mA
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

BUK221-50DY,118

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Buy BUK221-50DY,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 50V 4A SOT427
Lifecycle:
New from this manufacturer.
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