Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFET™
Product data Rev. 01 — 16 April 2003 7 of 16
9397 750 11167
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
[1] For a high-side switch, the load pin voltage goes negative with respect to the ground during the turn-off of an inductive load. This
negative voltage is clamped by the device.
[2] 9 V V
BG
35 V
[3] This is the current drawn from the supply when both inputs are LOW, and includes leakage current to the loads.
[4] Defined as in ISO10483-1. For comparison purposes only.
[5] This only applies to the R
BLon
per channel. The supply and input voltages for the R
BLon
tests are continuous. The specified pulse
duration is t
p
= 300 µs, and refers only to the applied load current.
[6] R
G
is a resistor incorporated internally into the package.
[7] 5.5 V V
BG
35 V
[8] An open circuit load can be detected in the off-state and requires an external pull-up resistor, R
L(oc)
.
[9] See Table 3 “Truth table”
[10] Overtemperature protection is not active during reverse current operation.
[11] Undervoltage sensor causes each output channel to switch off and reset.
[12] Overvoltage sensor causes each output channel to switch off to protect the load.
[13] After cooling below the reset temperature the channel will resume normal operation.
[14] The status output is an open drain transistor and requires an external pull-up resistor, R
S
, to indicate a logic HIGH.
I
L(oc)
load open circuit current V
LG
= 3.5 V; per channel - 22 40 µA
V
LG
= 16 V; per channel - 200 300 µA
R
L(oc)
open circuit load resistor V
S
= 5 V; connected externally;
per channel; Figure 10
-10-k
Undervoltage
[9]
V
BG(uv)
battery-ground undervoltage
[11]
2 4.2 5.3 V
V
BG(uv)(hys)
battery-ground undervoltage
hysteresis
- 0.5 1.5 V
Overvoltage
[9]
V
BG(ov)
battery-ground overvoltage
[12]
35 40 45 V
V
BG(ov)(hys)
battery-ground overvoltage hysteresis 0.2 1 2 V
I
G(ov)
overvoltage operating current V
BG
= 45 V; per channel - 1 2.5 mA
Overload protection
I
L(lim)
self-limiting load current V
BG
8 V; V
BL
=V
BG;
Figure 7 8 1216A
Overtemperature protection
[9][10]
T
j(th)
threshold junction temperature
[13]
150 170 190 °C
T
j(th)(hys)
threshold junction temperature
hysteresis
31020°C
Status
[9]
V
SG(CL)
status-ground clamping voltage I
S
= 100 µA 5.5 7 8.5 V
V
SG(L)
status-ground low voltage I
S
= 100 µA; Figure 6 - 0.7 0.9 V
I
S
= 250 µA - - 1.1 V
I
S(off)
status leakage current V
SG
=5V
T
mb
= 150 °C --10µA
T
mb
=25°C - 0.1 1 µA
R
S
status resistor V
SG
= 5 V; connected externally;
Figure 10
[14]
-47-k
Table 6: Static characteristics
…continued
Limits are valid for
40
°
C
T
mb
+150
°
C and typical values for T
mb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFET™
Product data Rev. 01 — 16 April 2003 8 of 16
9397 750 11167
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
I
L
= 4 A; V
IG
=5V
Fig 4. Battery-load on-state resistance as a function of battery-ground voltage; typical values.
V
IG
=5V
Fig 5. Supply current characteristics: operating current as a function of battery-ground voltage for one channel
only; typical values.
03pa96
0
40
80
120
160
200
0 10203040
V
BG
(V)
R
BLon
(m
)
T
j
= 150
°
C
T
j
= 25
°
C
T
j
= -40
°
C
03pa95
0
1
2
3
4
0 255075
V
BG
(V)
I
G
(mA)
T
j
= -40
°
C
undervoltage
shutdown
T
j
= 150
°
C
T
j
= 25
°
C
overvoltage
shutdown
clamping
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFET™
Product data Rev. 01 — 16 April 2003 9 of 16
9397 750 11167
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
V
BG
= 13 V; V
IG
=5V;T
j
=25°CV
BG
= 16 V; V
IG
=5V;T
mb
=25°C
Fig 6. Status current as a function of status-ground
voltage; typical values.
Fig 7. Self-limiting load current as a function of
battery-load voltage; typical values.
5.5 V V
BG
35 V V
BG
=35V
Fig 8. Input-ground threshold voltage as a function of
junction temperature.
Fig 9. Battery quiescent current as a function of
junction temperature; typical values.
03pa94
0
1
2
3
4
5
0123
V
SG
(V)
I
S
(mA)
03pa93
0
4
8
12
16
0 4 8 12 16
V
BL
(V)
I
L(lim)
(A)
03pa98
1
1.5
2
2.5
3
3.5
-50 0 50 100 150 200
T
j
(
°
C)
V
IG(th)
(V)
max
min
V
IG(OFF)
V
IG(ON)
03pa97
0
2
4
6
-50 0 50 100 150 200
T
j
(
°
C)
I
B
(
µ
A)

BUK221-50DY,118

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 50V 4A SOT427
Lifecycle:
New from this manufacturer.
Delivery:
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