74HC_HCT126 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 22 September 2014 4 of 16
NXP Semiconductors
74HC126; 74HCT126
Quad buffer/line driver; 3-state
8. Recommended operating conditions
9. Static characteristics
Table 5. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 74HC126 74HCT126 Unit
Min Typ Max Min Typ Max
V
CC
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
V
I
input voltage 0 - V
CC
0-V
CC
V
V
O
output voltage 0 - V
CC
0-V
CC
V
T
amb
ambient temperature 40 +25 +125 40 +25 +125 C
t/V input transition rise and fall rate V
CC
= 2.0 V - - 625 - - - ns/V
V
CC
= 4.5 V - 1.67 139 - 1.67 139 ns/V
V
CC
= 6.0 V - - 83 - - - ns/V
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C
to +85 C
T
amb
= 40 C
to +125 C
Unit
Min Typ Max Min Max Min Max
74HC126
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V 1.5 1.2 - 1.5 - 1.5 - V
V
CC
= 4.5 V 3.15 2.4 - 3.15 - 3.15 - V
V
CC
= 6.0 V 4.2 3.2 - 4.2 - 4.2 - V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V - 0.8 0.5 - 0.5 - 0.5 V
V
CC
= 4.5 V - 2.1 1.35 - 1.35 - 1.35 V
V
CC
= 6.0 V - 2.8 1.8 - 1.8 - 1.8 V
V
OH
HIGH-level
output voltage
V
I
=V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V
I
O
= 20 A; V
CC
= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 20 A; V
CC
= 6.0 V 5.9 6.0 - 5.9 - 5.9 - V
I
O
= 6.0 mA; V
CC
= 4.5 V 3.98 4.32 - 3.84 - 3.7 - V
I
O
= 7.8 mA; V
CC
= 6.0 V 5.48 5.81 - 5.34 - 5.2 - V
V
OL
LOW-level
output voltage
V
I
=V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 6.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 6.0 mA; V
CC
= 4.5 V - 0.15 0.26 - 0.33 - 0.4 V
I
O
= 7.8 mA; V
CC
= 6.0 V - 0.16 0.26 - 0.33 - 0.4 V
I
I
input leakage
current
V
I
= V
CC
or GND; V
CC
=6.0V - - 0.1 - 1.0 - 1.0 A
I
OZ
OFF-state
output current
V
I
=V
IH
or V
IL
; V
O
=V
CC
or
GND; other inputs at V
CC
or
GND; V
CC
= 6.0 V; I
O
=0A
- 0.5 - 5.0 - 10 - A
74HC_HCT126 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 22 September 2014 5 of 16
NXP Semiconductors
74HC126; 74HCT126
Quad buffer/line driver; 3-state
10. Dynamic characteristics
I
CC
supply current V
I
= V
CC
or GND; I
O
=0A;
V
CC
=6.0V
- - 8.0 - 80 - 160 A
C
I
input
capacitance
-3.5- - - - - pF
74HCT126
V
IH
HIGH-level
input voltage
V
CC
= 4.5 V to 5.5 V 2.0 1.6 - 2.0 - 2.0 - V
V
IL
LOW-level
input voltage
V
CC
= 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V
V
OH
HIGH-level
output voltage
V
I
=V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 6.0 mA 3.98 4.32 - 3.84 - 3.7 - V
V
OL
LOW-level
output voltage
V
I
=V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A - 0 0.1 - 0.1 - 0.1 V
I
O
= 6.0 mA - 0.16 0.26 - 0.33 - 0.4 V
I
I
input leakage
current
V
I
= V
CC
or GND; V
CC
=5.5V - - 0.1 - 1.0 - 1.0 A
I
OZ
OFF-state
output current
V
I
=V
IH
or V
IL
; V
O
=V
CC
or
GND; other inputs at V
CC
or
GND; V
CC
= 5.5 V; I
O
=0A
--0.5 - 5.0 - 10 A
I
CC
supply current V
I
=V
CC
or GND; I
O
= 0 A;
V
CC
=5.5V
- - 8.0 - 80 - 160 A
I
CC
additional
supply current
per input pin; I
O
=0A;
V
I
=V
CC
2.1 V;
other inputs at V
CC
or GND;
V
CC
= 4.5 V to 5.5 V;
nA, nOE inputs
- 100 360 - 450 - 490 A
C
I
input
capacitance
-3.5- - - - - pF
Table 6. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C
to +85 C
T
amb
= 40 C
to +125 C
Unit
Min Typ Max Min Max Min Max
Table 7. Dynamic characteristics
GND = 0 V; C
L
= 50 pF; for test circuit, see Figure 8.
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +125 C Unit
Min Typ Max Max (85 C) Max (125 C)
74HC126
t
pd
propagation delay nA to nY; see Figure 6
[1]
V
CC
= 2.0 V - 30 100 125 150 ns
V
CC
= 4.5 V - 11 20 25 30 ns
V
CC
= 5.0 V; C
L
=15pF - 9 - - - ns
V
CC
= 6.0 V - 9 17 21 26 ns
74HC_HCT126 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 22 September 2014 6 of 16
NXP Semiconductors
74HC126; 74HCT126
Quad buffer/line driver; 3-state
[1] t
pd
is the same as t
PLH
and t
PHL
.
t
en
is the same as t
PZL
and t
PZH
.
t
dis
is the same as t
PLZ
and t
PHZ
.
t
t
is the same as t
THL
and t
TLH
.
[2] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of outputs.
t
en
enable time nOE to nY; see Figure 7
[1]
V
CC
= 2.0 V - 41 125 155 190 ns
V
CC
= 4.5 V - 15 25 31 38 ns
V
CC
= 6.0 V - 12 21 26 32 ns
t
dis
disable time nOE to nY; see Figure 7
[1]
V
CC
= 2.0 V - 41 125 155 190 ns
V
CC
= 4.5 V - 15 25 31 38 ns
V
CC
= 6.0 V - 12 21 26 32 ns
t
t
transition time see Figure 6
[1]
V
CC
= 2.0 V - 14 60 75 90 ns
V
CC
= 4.5 V - 5 12 15 18 ns
V
CC
= 6.0 V - 4 10 13 15 ns
C
PD
power dissipation
capacitance
per package;
V
I
=GNDtoV
CC
[2]
-23- - - pF
74HCT126
t
pd
propagation delay nA to nY; see Figure 6
[1]
V
CC
= 4.5 V - 14 24 30 36 ns
V
CC
= 5.0 V; C
L
=15pF - 11 - - - ns
t
en
enable time nOE to nY; see Figure 7;
V
CC
=4.5V
[1]
-1325 31 38 ns
t
dis
disable time nOE to nY; see Figure 7;
V
CC
=4.5V
[1]
-1828 35 42 ns
t
t
transition time V
CC
= 4.5 V; see Figure 6
[1]
- 5 12 15 18 ns
C
PD
power dissipation
capacitance
per package;
V
I
=GNDtoV
CC
1.5 V
[2]
-24- - - pF
Table 7. Dynamic characteristics
…continued
GND = 0 V; C
L
= 50 pF; for test circuit, see Figure 8.
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +125 C Unit
Min Typ Max Max (85 C) Max (125 C)

74HC126PW,118

Mfr. #:
Manufacturer:
Nexperia
Description:
Buffers & Line Drivers QUAD 3-STATE BUS BUF
Lifecycle:
New from this manufacturer.
Delivery:
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