Philips Semiconductors Product specification
TrenchMOS transistor BUK95150-55A
Logic level FET BUK96150-55A
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(V
GS
); conditions: I
D
= 13 A;
Fig.8. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
Fig.9. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
0
10
20
30
40
50
60
70
80
90
100
0246810
VDS/V
ID/A
2.8
3.0
3.6
3.8
4.0
6.0
10.0
VGS/V =
2.6
3.4
3.2
2.4
4.4
4.8
5.0
5.5
6.5
7.0
7.5
0
10
20
30
40
50
60
70
01234567
VGS/V
ID/A
Tj/C= 175
o
C
25
o
C
0 10203040506070
20
25
30
35
40
ID/A
RDS(ON)/mOhm
VGS/V=
3.0
3.2
3.4
3.6
4.0
5.0
0
5
10
15
20
25
0 5 10 15 20 25 30 35
ID/A
gfs/S
345678910
22
23
24
25
26
27
28
29
30
31
32
33
ID/A
RDS(ON)/mOhm
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Tmb / degC
a
Rds(on) normalised to 25degC
February 2000 4 Rev 1.000
