SMA6F7.5A-M3/6A

1/5
PKC-136
August 2001 - Ed: 2A
PEAK CLAMP
®
Accurate voltage clamping regardless load
Reduced current loop
Reduced EMI emission
High integration
Fast assembly
Reduced losses in stand by mode
BENEFITS
Protection of the Mosfet in flyback power supply
TRANSIL™ and blocking diode in a single
package
FEATURES
Symbol Parameter Value Unit
T
stg
Storage temperature
- 40 to + 150 °C
T
j
Junction temperature
150 °C
P
Maximum power dissipation T°lead = 90°C
1.5 W
ABSOLUTE MAXIMUM RATINGS (limiting values)
V
BR
160Vdc
V
DRM
700Vdc
P 1.5W
MAIN PRODUCT CHARACTERISTICS
DO-15
Application Specific Discretes
ASD™
Vo
Io
Lf
T
D
BASIC CONNECTION
PKC-136
2/5
Symbol Parameter Tests conditions
Value
Unit
Min. Typ. Max.
I
R
Reverse leakage current V
R
=V
RRM
T
j
= 25°C
3 µA
T
j
= 125°C
320
V
RRM
Repetitive Peak Reverse
Voltage
T
j
= 25°C
700 V
trr
Reverse Recovery Time I
F
=1A dI
F
/ dt = -50A/µs
V
R
= 30V
45 ns
V
FP
Peak Forward Voltage I
F
=3A
dI
F
/ dt = 100A/µs
T
j
= 25°C
12 V
T
j
= 125°C
18
ELECTRICAL CHARACTERISTICS DIODE (Tj = 25°C unless otherwise specified)
Symbol Parameter Test conditions
Value
Unit
Min. Typ. Max.
I
RM
Leakage current V
R
= 136V
T
j
= 25°C 1 µA
T
j
=125°C 10
V
BR
Breakdown voltage I
R
= 1mA
pulse test < 50ms
T
j
= 25°C 150 160 170 V
R
d
Dynamical Resistance tp < 500ns
between I = 0.5Amps
and I = 1.5Amps
T
j
= 125°C 4
αT
Temperature
Coefficient
10.8 10
-4
/°C
V
sCL
Surge Clamping
voltage
Ipp = 2.7Amps
10/1000µs
219 V
ELECTRICAL CHARACTERISTICS TRANSIL
In repetitive mode and for low current rating, use the equation (1) and (2) to calculate the breakdown
voltage V
BR
of the transil versus the operating junction temperature and use the equation (3) to calculate
the clamping voltage versus the transil current Ipp and the temperature.
VTTVC
BR j BR
=− °α()()25 25
(1)
VT V C V
BR j BR BR
() ( )+25
(2)
V T V T Rd Ipp
CL j BR j
() () .=+
(3)
CALCULATION OF THE CLAMPING VOLTAGE:
Symbol Parameter Typical Value Unit
C
Total Parasitic capacitance 1MHz 30mV
35 pF
CAPACITANCE
PKC-136
3/5
1.E-01
1.E+00
1.E+01
1.E+02
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
tp(ms)
Tj initial=25°C
Pp(kW)
Fig. 1: Peak pulse power versus exponential pulse
duration.
0
10
20
30
40
50
60
70
80
90
100
110
0 25 50 75 100 125 150 175
Tj(°C)
%
Fig. 2: Relative variation of peak pulse power
versus initial junction temperature.
Symbol Parameter Value Unit
R
th(j-l)
Junction to leads L = 10mm
40 °C/W
R
th(j-a)
Junction to ambiant condition see note 1
105 °C/W
Note 1: Device mounted on a epoxy FR4 board of 35µm thickness
Lead Length: 10mm
Pad diameter: 4mm
Track width: 1mm
Track length: 25mm
The Rth
(j-a)
can be reduced by replacing the Cu track by plan:
S(Cu) = 1.5cm
2
/lead R
th(j-a)
= 65°C/W
S(Cu) = 3.5cm
2
/lead R
th(j-a)
= 60°C/W
THERMAL RESISTANCES
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150
Tamb(°C)
Tamb=Tleads
Printed circuit board
P(W)
Fig. 3: Average power dissipation versus ambient
temperature.
1.0
10.0
100.0
1000.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Zth(j-a) (°C/W)
Free air
tp(s)
Fig. 4: Variation of thermal impedance junction to
ambient versus pulse duration (printed circuit
board epoxy FR4)

SMA6F7.5A-M3/6A

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
TVS Diodes / ESD Suppressors 600W 7.5V 5% Uni Low Profile
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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