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NTMD4840NR2G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2009
September, 2009 − Rev. 1
1 Publication Order Number:
NTMD4840N/D
NTMD4840N
Power MOSFET
30 V, 7.5 A, Dual N−Channel, SOIC−8
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Dual SOIC−8 Surface Mount Package Saves Board Space
• This is a Pb−Free Device
Applications
• Disk Drives
• DC−DC Converters
• Printers
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
5.5
A
T
A
= 70°C 4.4
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
1.14 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
4.5
A
T
A
= 70°C 3.5
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.68 W
Continuous Drain
Current R
q
JA
t < 10 s
(Note 1)
T
A
= 25°C
I
D
7.5
A
T
A
= 70°C 6.0
Power Dissipation
R
q
JA
t < 10 s (Note 1)
T
A
= 25°C P
D
1.95 W
Pulsed Drain Current T
A
= 25°C,
t
p
= 10 ms
I
DM
30 A
Operating Junction and Storage Temperature T
J
, T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
2.0 A
Single Pulse Drain−to−Source Avalanche
Energy T
J
= 25°C, V
DD
= 30 V, V
GS
= 10 V,
I
L
= 7.5 A
pk
, L = 1.0 mH, R
G
= 25 W
EAS 28 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Rating Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
110
°C/W
Junction−to−Ambient – t≤10 s (Note 1)
R
q
JA
64
Junction−to−FOOT (Drain)
R
q
JF
40
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
183.5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
N−Channel
30 V
36 mW @ 4.5 V
24 mW @ 10 V
R
DS(on)
Max
I
D
Max
V
(BR)DSS
7.5 A
Device Package Shipping
†
ORDERING INFORMATION
NTMD4840NR2G SOIC−8
(Pb−Free)
2500/Tape & Reel
SOIC−8
CASE 751
STYLE 11
4840N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
8
4840N
AYWW
G
1
8
MARKING DIAGRAM
& PIN ASSIGNMENT
S1 G1 S2 G2
D1 D1 D2 D2
D
G
S
NTMD4840N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)jk
Characteristic
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage Tem-
perature Coefficient
V
(BR)DSS
/T
J
18
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
1.0
mA
T
J
= 100°C
10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.5 3.0 V
Negative Threshold Temperature Coeffi-
cient
V
GS(TH)
/T
J
6.0
mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 6.9 A
16 24
mW
V
GS
= 4.5 V I
D
= 5.0 A
26 36
Forward Transconductance g
FS
V
DS
= 1.5 V, I
D
= 6.9 A 15 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 15 V
520
pF
Output Capacitance C
OSS
140
Reverse Transfer Capacitance C
RSS
70
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 6.9 A
4.8
nC
Threshold Gate Charge Q
G(TH)
1.1
Gate−to−Source Charge Q
GS
2.1
Gate−to−Drain Charge Q
GD
1.9
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V, I
D
= 6.9 A 9.5 nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 10 V, V
DD
= 15 V,
I
D
= 1.0 A, R
G
= 3.0 W
7.6
ns
Rise Time t
r
5.0
Turn−Off Delay Time t
d(OFF)
17
Fall Time t
f
3.0
DRAIN−TO−SOURCE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V
I
D
= 2.0 A
T
J
= 25°C
0.76 1.0
V
T
J
= 125°C
0.58
ns
Reverse Recovery Time t
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 2.0 A
12.5
Charge Time T
a
7.3
Discharge Time T
b
5.2
Reverse Recovery Time Q
RR
6.0
nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25°C
0.66 nH
Drain Inductance L
D
0.20 nH
Gate Inductance L
G
1.50 nH
Gate Resistance R
G
2.0 3.0
W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMD4840N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
T
J
= 125°C
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 5. On−Resistance Variation with
Temperature
T
J
= 25°C
T
J
= −55°C
T
J
= 25°C
T
J
= 25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 10 V
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 150°C
T
J
= 125°C
V
GS
= 4.5 V
V
DS
≥ 10 V
3.2 V
3.0 V
T
J
= 25°C
I
D
= 6.9 A
I
D,
DRAIN CURRENT (AMPS)
3.8 V
4.5 V
4 V
2.6 V
0
2
4
6
8
0 1.0 2.0 3.0
0
8
16
24
234
0.015
0.025
0.030
0.035
0.040
0.045
0.050
0.055
46 810
0.014
0.016
0.018
0.020
0.022
0.024
0.026
25 11
100
1000
10000
100000
51015202530
3.4 V
10V
4.2 V
2.8 V
0.060
10
12
5.04.0
1.5 2.5 3.5 4.5
3.5 8 14
4
12
20
3579
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 7.5 A
V
GS
= 10 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
0.65
0.85
1.05
1.25
1.45
1.65
−50 −25 0 25 50 75 100 125 150
0.75
0.95
1.15
1.35
1.55
32
28
0.020
6.5 9.5 12.5
0.028
0.030
P1-P3P4-P5

NTMD4840NR2G

Mfr. #:
Buy NTMD4840NR2G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8 30V 7.5A 0.034R
Lifecycle:
New from this manufacturer.
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