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IS61LV12824-10BL

P1-P3P4-P6P7-P9P10-P12P13-P13
IS61LV12824
ISSI
®
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
06/22/05
OPERATING RANGE
Range Ambient Temperature VCC (8 ns) VCC (10 ns)
Commercial 0°C to +70°C 3.3V + 10%, – 5% 3.3V ± 10%
Industrial –40°C to +85°C 3.3V + 10%, – 5% 3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage 2.2 VCC + 0.3 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
ILI Input Leakage GND ≤ VIN ≤ VCC –1 1 µA
ILO Output Leakage GND ≤ VOUT ≤ VCC, Outputs Disabled –1 1 µA
Note:
1. V
IL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width ≤ 2.0 ns).
VIH (max.) = VCC + 0.3V DC; VIH (max.) = VCC + 2.0V AC (pulse width ≤ 2.0 ns).
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VCC Power Supply Voltage Relative to GND –0.5 to 5.0 V
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V
TSTG Storage Temperature –65 to + 150 °C
TBIAS Temperature Under Bias: Com. –10 to + 85 °C
Ind. –45 to + 90 °C
PT Power Dissipation 2.0 W
IOUT DC Output Current ±20 mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TRUTH TABLE
Mode
WEWE
WEWE
WE
CE1CE1
CE1CE1
CE1 CE2
CE2CE2
CE2CE2
CE2
OEOE
OEOE
OE I/O0-I/O23 Vcc Current
Not Selected X H X X X High-Z ISB1, ISB2
XXLXX
XXXHX
Output Disabled H L H L H High-Z ICC
Read H L H L L DOUT ICC
Write L L H L X DIN ICC
IS61LV12824
1
2
3
4
5
6
7
8
9
10
11
12
ISSI
®
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
Rev. D
06/22/05
CAPACITANCE
(1)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 6 pF
COUT Input/Output Capacitance VOUT = 0V 8 pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-8 ns -10 ns
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
ICC Vcc Dynamic Operating VCC = Max., Com. — 210 — 180 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. — 240 — 210
I
SB1 TTL Standby Current VCC = Max., Com. — 70 — 50 mA
(TTL Inputs) VIN = VIH or VIL, f = max. Ind. — 80 — 55
CE1, CE2, ≥ VIH, CE2 ≤ VIL
ISB2 CMOS Standby VCC = Max., Com. — 10 — 10 mA
Current (CMOS Inputs) CE1, CE2 ≥ VCC – 0.2V, Ind. — 20 — 20
CE2 ≤ 0.2V, VIN ≥ VCC – 0.2V,
or VIN ≤ 0.2V, f = 0
Note:
1. At f = f
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
AC TEST CONDITIONS
Parameter Unit
Input Pulse Level 0V to 3.0V
Input Rise and Fall Times 2 ns
Input and Output Timing 1.5V
and Reference Level
Output Load See Figures 1 and 2
AC TEST LOADS
Figure 1 Figure 2
319 Ω
5 pF
Including
jig and
scope
353 Ω
OUTPUT
3.3V
OUTPUT
Z
O
= 50Ω
1.5V
50Ω
IS61LV12824
ISSI
®
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
06/22/05
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-8 -10
Symbol Parameter Min. Max. Min. Max. Unit
tRC Read Cycle Time 8 — 10 — ns
tAA Address Access Time — 8 — 10 ns
tOHA Output Hold Time 3 — 3 — ns
tACE CE1, CE2 Access Time 8 — — 10 ns
tACE2 CE2 Access Time
tDOE OE Access Time — 4 — 4 ns
tHZOE
(2)
OE to High-Z Output 0 3 0 3 ns
tLZOE
(2)
OE to Low-Z Output 0 — 0 — ns
tHZCE
(2)
CE1, CE2 to High-Z Output 0 4 0 5 ns
tHZCE
2
(2)
CE2 to High-Z Output
tLZCE
(2)
CE, CE2 to Low-Z Output 3 — 3 — ns
tLZCE
2
(2)
CE2 to Low-Z Output
Notes:
1. Test conditions assume signal transition times of 2 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±200 mV from steady-state voltage. Not 100% tested.
P1-P3P4-P6P7-P9P10-P12P13-P13

IS61LV12824-10BL

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SRAM 3Mb 128Kx24 10ns Async SRAM 3.3v
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