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IXGP42N30C3

P1-P3P4-P6
© 2008 IXYS CORPORATION, All rights reserved
GenX3
TM
300V IGBT
High Speed PT IGBTs for
50-150kHz switching
V
CES
= 300V
I
C110
= 42A
V
CE(sat)
≤ ≤
≤ ≤
≤
1.85V
t
fi typ
= 65ns
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 300 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
2.5 5.0 V
I
CES
V
CE
= V
CES
25 μA
V
GE
= 0V T
J
= 125°C 500 μA
I
GES
V
CE
= 0V, V
GE
= ±20V ±100 nA
V
CE(sat)
I
C
= 42A, V
GE
= 15V, Note1 1.54 1.85 V
T
J
= 125°C 1.54 V
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 300 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 300 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C110
T
C
= 110°C (chip capability) 42 A
I
CM
T
C
= 25°C, 1ms 250 A
I
A
T
C
= 25°C 42 A
E
AS
T
C
= 25°C 250 mJ
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 10Ω I
CM
= 84 A
(RBSOA) Clamped inductive load @ ≤ 300V
P
C
T
C
= 25°C 223 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
Maximum lead temperature for soldering 300 °C
T
SOLD
1.6mm (0.062 in.) from case for 10s 260 °C
M
d
Mounting torque (TO-247)(TO-220) 1.13/10 Nm/lb.in.
Weight TO-263 2.5 g
TO-247 6.0 g
TO-220 3.0 g
DS99885B(07/08)
G = Gate C = Collector
E = Emitter TAB = Collector
IXGA42N30C3
IXGH42N30C3
IXGP42N30C3
TO-220 (IXGP)
TO-247 (IXGH)
C (TAB)
Features
z
Optimized for low switching losses
z
Square RBSOA
z
High current handling capability
z
International standard packages
Advantages
z
High power density
z
Low gate drive requirement
Applications
z
High Frequency Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
TO-263 (IXGA)
G
E
G
C
E
C (TAB)
C (TAB)
G
E
C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGA42N30C3 IXGH42N30C3
IXGP42N30C3
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
I
C
= 0.5 • I
C110
, V
CE
= 10V, Note 1 20 33 S
C
ies
2140 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 218 pF
C
res
60 pF
Q
g
76 nC
Q
ge
I
C
= I
C110
, V
GE
= 15V, V
CE
= 0.5 • V
CES
15 nC
Q
gc
26 nC
t
d(on)
21 ns
t
ri
23 ns
E
on
0.12 mJ
t
d(off)
113 170 ns
t
fi
65 120 ns
E
off
0.15 0.28 mJ
t
d(on)
21 ns
t
ri
22 ns
E
on
0.21 mJ
t
d(off)
127 ns
t
fi
102 ns
E
off
0.20 mJ
R
thJC
0.56 °C/W
R
thCK
TO-220 0.50 °C/W
TO-247 0.25 °C/W
Inductive Load, T
J
= 125
°°
°°
°C
I
C
= 0.5 • I
C110
, V
GE
= 15V
V
CE
= 200V, R
G
= 10Ω
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
Inductive Load, T
J
= 25
°°
°°
°C
I
C
= 0.5 • I
C110
, V
GE
= 15V
V
CE
= 200V, R
G
= 10Ω
Pins: 1 - Gate 2 - Drain
TO-220 (IXGP) Outline
TO-263 (IXGA) Outline
Note1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
© 2008 IXYS CORPORATION, All rights reserved
IXGA42N30C3 IXGH42N30C3
IXGP42N30C3
Fig. 1. Output Characteristics
@ 25ºC
0
10
20
30
40
50
60
70
80
90
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
11
V
7V
5V
9V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
25
50
75
100
125
150
175
200
225
250
275
300
325
0246810121416
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15
V
13
V
11
V
7V
9V
5V
Fig. 3. Output Characteristics
@ 125ºC
0
10
20
30
40
50
60
70
80
90
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
11
V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 84A
I
C
= 42A
I
C
= 21A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 84A
42A
21A
T
J
= 25ºC
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
110
120
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
P1-P3P4-P6

IXGP42N30C3

Mfr. #:
Buy IXGP42N30C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors 42 Amps 300V
Lifecycle:
New from this manufacturer.
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