© 2008 IXYS CORPORATION, All rights reserved
IXGA42N30C3 IXGH42N30C3
IXGP42N30C3
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
10 15 20 25 30 35 40 45 50 55 60 65 70 75
R
G
- Ohms
E
off
- MilliJoules
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 200V
I
C
= 84A
I
C
= 42A
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
70
80
90
100
110
120
130
140
150
160
170
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
110
115
120
125
130
135
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 200V
I
C
= 84A
I
C
= 42A
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
100
110
120
130
140
150
160
170
180
190
200
10 15 20 25 30 35 40 45 50 55 60 65 70 75
R
G
- Ohms
t
f
- Nanoseconds
100
150
200
250
300
350
400
450
500
550
600
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 200V
I
C
= 84A
I
C
= 42A
Fig. 13. Inductive Swiching
Energy Loss vs. Collector Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
20 25 30 35 40 45 50 55 60 65 70 75 80 85
I
C
- Amperes
E
off
- MilliJoules
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
Ω ,
V
GE
= 15V
V
CE
= 200V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Swiching
Energy Loss vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
Ω
,
V
GE
= 15V
V
CE
= 200V
I
C
= 84A
I
C
= 42A
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
50
60
70
80
90
100
110
120
130
140
150
160
170
20 30 40 50 60 70 80
I
C
- Amperes
t
f
- Nanoseconds
110
115
120
125
130
135
140
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 200V
T
J
= 125ºC
T
J
= 25ºC
