BSR606NH6327XTSA1

P1-P3 P4-P6 P7-P9

BSR606N

OptiMOS

™

-3 Small-Signal-Transistor

Features

• N-channel

• Enhancement mode

• Logic level (4.5V rated)

• Avalanche rated

• Qualified according to AEC Q101

• 100%lead-free; Halogen-free; RoHS compliant

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

A

=25 °C

2.3 A

T

A

=70 °C

1.8

Pulsed drain current

I

D,pulse

T

A

=25 °C

9.1

Avalanche energy, single pulse

E

AS

I

D

=2.3 A, R

GS

=25 W

20 mJ

Reverse diode dv/dt dv /dt

I

D

=2.3 A, V

DS

=48 V,

di/dt=100 A/µs,

T

j,max

=150 °C

6 kV/µs

Gate source voltage

V

GS

±20 V

Power dissipation

1)

P

tot

T

A

=25 °C

W

Operating and storage temperature

T

j

, T

stg

-55 ... 150 °C

ESD Class

JESD22-A114 -HBM class 0 (<250V)

Soldering Temperature 260 °C

IEC climatic category; DIN IEC 68-1 55/150/56

1)

Value refers to minimum footprint

Value

0.5

PG-SC59

3

1

2

V

DS

60

V

R

DS(on),max

V

GS

=10 V

60

mW

V

GS

=4.5 V

90

I

D

2.3

A

Product Summary

Type

Package

Tape and Reel Information

Marking

Halogen-

Package

BSR606N

PG-SC59

H6327: 3000 pcs/ reel

LIs

Yes

Non-dry

Rev 2.3 page 1 2013-05-02

BSR606N

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

=250 µA

60 - - V

Gate threshold voltage

V

GS(th)

V

DS

=0 V, I

D

=15 µA

1.3 1.8 2.3

Drain-source leakage current

I

DSS

V

DS

=60 V, V

GS

=0 V,

T

j

=25 °C

- - 1

mA

V

DS

=60 V, V

GS

=0 V,

T

j

=150 °C

- - 100

Gate-source leakage current

I

GSS

V

GS

=20 V, V

DS

=0 V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=4.5 V, I

D

=1.1 A

- 63 90

mW

V

GS

=10 V, I

D

=2.3 A

- 45 60

Transconductance

g

fs

|V

DS

|>2|I

D

|R

DS(on)max

,

I

D

=1.8 A

5.4 - S

Values

2)

Performed on 40mm

2

FR4 PCB. The traces are 1mm wide, 70μm thick and 20mkm long; they are present on both

sides of the PCB.

R

thJA

minimal footprint

2)

-

-

250

SMD version, device on PCB

Rev 2.3 page 2 2013-05-02

BSR606N

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance

C

iss

- 494 657 pF

Output capacitance

C

oss

- 131 174

Reverse transfer capacitance

C

rss

- 10.2 15.3

Turn-on delay time

t

d(on)

- 5.6 - ns

Rise time

t

r

- 2.6 -

Turn-off delay time

t

d(off)

- 13 -

Fall time

t

f

- 2.1 -

Gate Charge Characteristics

Gate to source charge

Q

gs

- 1.6 2.1 nC

Gate to drain charge

Q

gd

- 1.0 1.4

Gate charge total

Q

g

- 3.7 5.6

Gate plateau voltage

V

plateau

- 3.0 - V

Reverse Diode

Diode continous forward current

I

S

- - 0.9 A

Diode pulse current

I

S,pulse

- - 12.8

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=2.3 A,

T

j

=25 °C

- 0.83 1.15 V

Reverse recovery time

t

rr

- 22 - ns

Reverse recovery charge

Q

rr

- 11 - nC

V

R

=30 V, I

F

=2.3 A,

di

F

/dt=100 A/µs

T

A

=25 °C

Values

V

GS

=0 V, V

DS

=25 V,

f=1 MHz

V

DD

=15 V, V

GS

=10 V,

I

D

=3.2A, R

G,ext

=6 W

V

DD

=48 V, I

D

=3.2 A,

V

GS

=0 to 5 V

Rev 2.3 page 3 2013-05-02

P1-P3 P4-P6 P7-P9

BSR606NH6327XTSA1

Mfr. #:

Buy BSR606NH6327XTSA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-Ch 60V 2.3A SOT-23-3

Lifecycle:

New from this manufacturer.

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BSR606NH6327XTSA1