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BSR606NH6327XTSA1
P1-P3
P4-P6
P7-P9
BSR606N
1 Power dissipation
2 Drain current
P
tot
=f(
T
A
)
I
D
=f(
T
A
);
V
GS
≥10 V
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
A
=25 °C;
D
=0
Z
thJA
=f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
1 µs
10 µs
100 µs
1 m
s
10 m
s
DC
10
-1
10
0
10
1
10
2
10
-3
10
-2
10
-1
10
0
10
1
10
2
I
D
[A]
V
DS
[V]
single
pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
Z
thJA
[K/W]
t
p
[s]
0
0.1
0.2
0.3
0.4
0.5
0.6
0
40
80
120
160
P
tot
[W]
T
A
[
°
C]
0
0.4
0.8
1.2
1.6
2
2.4
0
20
40
60
80
100
120
140
160
I
D
[A]
T
A
[
°
C]
Rev 2.3
page 4
2013-05-02
BSR606N
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(
V
DS
);
T
j
=25 °C
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)ma
x
g
fs
=f(
I
D
);
T
j
=25 °C
0
2
4
6
8
10
12
0
2
4
6
8
10
g
fs
[S]
I
D
[A]
25
°C
150
°C
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
I
D
[A]
V
GS
[V]
2.8 V
3 V
3.3 V
3.5 V
4.5 V
10 V
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
I
D
[A]
V
DS
[V]
3 V
3.3 V
3.5 V
4 V
4.5 V
10 V
0
50
100
150
0
2
4
6
8
10
R
DS(on)
[m
W
]
I
D
[A]
Rev 2.3
page 5
2013-05-02
BSR606N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=2.3 A;
V
GS
=10 V
V
GS(th)
=f(
T
j
);
V
DS
=V
GS
;
I
D
=15 µA
parameter:
I
D
11 Typ. capacitances
12 Forward characteristics of reverse diode
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
; T
j
=25°C
I
F
=f(
V
SD
)
parameter:
T
j
typ
max
0
20
40
60
80
100
120
-
60
-
20
20
60
100
140
180
R
DS(on)
[m
W
]
T
j
[
°
C]
typ
max
min
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-
60
-
20
20
60
100
140
180
V
GS(th)
[V]
T
j
[
°
C]
25
°C
150
°C
25
°C, 98%
150
°C, 98%
10
-3
10
-2
10
-1
10
0
10
1
0
0.4
0.8
1.2
1.6
I
F
[A]
V
SD
[V]
Ciss
Coss
Crss
10
1
10
2
10
3
0
10
20
30
C
[pF]
V
DS
[V]
Rev 2.3
page 6
2013-05-02
P1-P3
P4-P6
P7-P9
BSR606NH6327XTSA1
Mfr. #:
Buy BSR606NH6327XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 2.3A SOT-23-3
Lifecycle:
New from this manufacturer.
Delivery:
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BSR606NH6327XTSA1