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AMMP-6442-BLKG

P1-P3P4-P6P7-P8
AMMP-6442
37- 40 GHz, 1W Linear Power Amplier
in SMT Package
Data Sheet
Description
The AMMP-6442 MMIC is a 1W linear power amplier in
a surface mount package designed for use in transmit-
ters that operate at frequencies between 37GHz and
40GHz. In the operational band, it provides 30dBm of
output power (P-1dB) and 23dB of small-signal gain.This
PA is also designed for high linear applications with typical
performance of 36dBm OIP3 at 18dBm SCL output.
Applications
• Point-to-Point Radio Systems
• mmW Communications
Package Diagram
Features
• 5x5mm SMT package
• 1 watt output power
• 50 Ω match on input and output
• ESD protection (50V MM, and 250V HBM)
Typical Performance (Vdd = 5V, Id(q) = 0.7A)
• Frequency range 37 to 40 GHz
• Small signal Gain of 23dB (Typ.)
• Output power @P-1 of 30dBm (Typ.)
• Input and Output return losses -8dB
• OIP3 of 35dBm @Po=18dBm (scl)
Functional Block Diagram
Attention: Observe Precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A): 50V
ESD Human Body Model (Class 1A): 250V
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Pin Function
1 Vd1
2 Vd2
3 Vd3
4 RF OUT
5 Vd3
6 Vg2
7 Vg1
8 RF IN
8
1 2 3
4
567
Note:
1. This MMIC uses depletion mode pHEMT devices.
Negative supply is used for DC gate biasing.
1 2 3
7 56
4
8RF IN
RF OUT
Vd2Vd1 Vd3
Vg2Vg1 Vd3
GND
Note: MSL Rating = Level 2A
2
Electrical Specifications
1. Small/Large -signal data measured in a fully de-embedded test xture form TA = 25°C.
2. Pre-assembly into package performance veried 100% on-wafer per AMMC-6442 published specications.
3. This nal package part performance is veried by a functional test correlated to actual performance at one or more
frequencies.
4. Specications are derived from measurements in a 50 Ω test environment. Aspects of the amplier performance may
be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)
matching.
5. The Gain and P1dB tested at 37GHz and 40GHz guaranteed with measurement accuracy +/-1.5dB for gain and +/-
1.6dB for P1dB.
Table 1. RF Electrical Characteristics
TA=25°C, Vdd=5.0V, Idq=0.7V, Vg=-1V, Zo=50 Ω
Parameter Min Typ. Max Unit
Operational Frequency, Freq 37 40 GHz
Small-signal Gain, Gain 20 23 dB
Output Power at 1dB Gain Compression, P-1dB 28 30 dBm
Relative Third Order Inter-modulation level (∆f=10MHz, Po=+12dBm, SCL), IM3 36 dBc
Input Return Loss, RLin 8 dB
Output Return Loss, RLout 8 dB
Reverse Isolation, Isolation 45 dB
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb) = 25°C calculated from measured data.
Description Min. Typical Max. Unit Comments
Drain Supply Current, Idq 700 mA Vdd = 5V, Vg set for Idq Typical
Gate Supply Operating Voltage, Vg -1.3 -1 -0.7 V Idq=700mA
3
Table 3. Thermal Properties
Parameter Test Conditions Value
Channel Temperature, Tch Tch=150 °C
Thermal Resistance
[1]
(Channel-to-Base Plate), qch-bs
Ambient operational temperature TA = 25°C
Channel-to-backside Thermal Resistance Tchannel(Tc)=34°C
Thermal Resistance at backside temperature Tb=25°C
q
JC
= 17 °C/W
Note:
1. Assume AnPb soldering to an evaluation RF module at 90.5 °C base plate temperatures.
Absolute Minimum and Maximum Ratings
Table 4. Minimum and Maximum Ratings
[1]
Description Pin Min. Max. Unit Comments
Drain Supply Voltage, Vd
[2]
5.5 V
Gate Supply Voltage, Vg -2 0
Power Dissipation, Pd
[2,3]
6
CW Input Power, Pin
[2]
20 dBm CW
Channel Temperature
[4,5]
+150 °C
Storage Temperature -65 +155 °C
Maximum Assembly Temperature +260 °C 30 second maximum
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. These ratings apply to each individual FET
4. The operating channel temperature will directly aect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
P1-P3P4-P6P7-P8

AMMP-6442-BLKG

Mfr. #:
Buy AMMP-6442-BLKG
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier 35-40 GHz Power Amp Linear Power Amp
Lifecycle:
New from this manufacturer.
Delivery:
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